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Organic Semiconductors on Inside Cover of Advanced Materials

Chemical engineering graduate student Stephanie Lee and postdoctoral associate Chang Su Kim, working with Professor Lynn Loo and collaborators from the University of Kentucky and Lawrence Berkeley National Labs, have discovered a method to tune the grain size of organic semiconductors over a remarkable three orders of magnitude. Building on this finding, they directly showed how grain size controls mobility in thin-film transistors, where the active layer is the organic TES-ADT.

Published in the current issue of Advanced Materials, the inside cover features a striking montage of optical micrographs demonstrating the broad accessible range of TES-ADT grain sizes.

Tag(s): Lynn Loo