Carbon nanoelectronics – The zero M resistivity and more
Speaker: Professor Yung Woo Park, Department of Physics and Astronomy, Seoul National University
Series: Topical Seminars
Date/Time: Monday, April 30, 2012, 2:00 p.m. - 3:00 p.m.
Carbon nanoelectronics are future electronics complementary to the present silicon technology. It opens new paradigm of science and technology. Carbon is a lighter element than Si or Ge. Diamond, graphite and graphene, C60 fullerene, carbon nanotubes are the proto types of carbon. The conducting polymers, organic single crystals, single molecules and bio-molecules can be regarded as extended carbon based materials with hydrogens, nitrogens and another elements attached to the carbon backbone. Fundamental properties and applicability of the carbon based materials and their composites are investigated. In particular the vanishing magneto resistance (VMR) observed in polyacetylene nanofibers1,2 is a seminal discovery which shows the zero magneto resistance in high electric field. It is named as zero M resistivity in analogy to the zero resistance of superconductivity. An electric field modulated high magnetic field switching device can be developed with the polyacetylene nanofibers as a potential application for more stable high speed magnetic levitation trains. Recent works on the electrospun CNT filled polymer composites3 and coaxial carbon nanofibers with NiO core4, graphene nanorings5, perchlorate-doped TTF-diamide nanofibers with double and triple helix structures6, CNT based nonvolatile electromechanical memory7 are envisaged.
1. A. Choi, H. J. Lee, A. B. Kaiser, S. H. Jhang, S. H. Lee, J. S. Yoo, K. H. S., Y. W. Nam, S. J. Park, H. N. Yoo, A. N. Aleshin, M. Goh, K. Akagi, R. B. Kaner, J. S. Brooks, J. Svensson, S. A. Brazovskii, N. N. Kirova and Y. W. Park, Synthetic Metals, 160, 1349 (2010),
2. Y. W. Park, Chemical Society Reviews, 39, 2428 (2010)
3. B. Sundaray, A. Choi and Y. W. Park, Synthetic Metals, 160, 984 (2010) (cover paper)
4. B. Sundaray, A. Choi, J. S. Kim and Y. W. Park (to be published)
5. J. S. Yoo, V. Skakalova, S. Roth and Y. W. Park, Appl. Phys. Lett. 96, 143112 (2010)
6. S. J. Ahn, Y. K. Kim, S. J. Baek, S. Ishimoto, H. Enozawa, E. Isomura, M. Hasegawa, M. Iyoda, and Y. W. Park, J. Mater. Chem. 20, 10817 (2010) (cover paper)
7. S. W. Lee, S. J. Park, E. E. B. Campbell and Y. W. Park, Nature Commun. 2:220 doi: 10.1038/ncomms1227 (2011)