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Seminar 12/7/2011 - Xiuling Li, University of Illinois, Urbana-Champaign: Semiconductor Nanoelectronic and Nanophotonic Devices

Title:  Semiconductor Nanoelectronic and Nanophotonic Devices:  Towards controllability and manufacturability.

Bio: Xiuling Li received her Ph.D. degree from the University of California at Los Angeles. She joined the faculty of the University of Illinois in 2007, after working at a startup company for six years. She is currently an assistant professor in the Department of Electrical and Computer Engineering. Her research interests are in the area of nanostructured semiconductor materials and devices. She has won the NSF CAREER award (2008), DARPA Young Faculty Award (2009) and ONR Young Investigator Award (2011). Her group's work on the planar nanowires has won one of the best student paper awards at the 2008 IEEE Photonic Society annual meeting. The micro and nanotube work has been identified as an outstanding symposium paper presented at the 2008 MRS meeting.

Abstract: This talk focuses on three types of scalable semiconductor nanotechnology platforms and their applications in nanoelectronics, photonics, and energy harvesting.

Interests in semiconductor nanowires (NWs) have increased exponentially over the past decade because of their unique optical and electrical properties. Integration of semiconductor NW based devices has been challenging for vertical nanowire devices since ex-situ assembly techniques are required to align planar NW devices. I will present our discovery of a type of NWs that is planar, self-aligned, twin-defect free, high carrier mobility, and transfer-printable. The planar nanowire growth and doping mechanism by MOCVD, as well as the device characteristics of MESFET, MOSFET, and HEMT using such GaAs NW as the channel material, will be analyzed.

Self-rolled-up tubes are a relatively new platform that possesses the potential to provide a wide range of functionalities.  It is formed by a combination of top-down and bottom-up approach through the self-rolling of strained thin films. This allows feasible large area assembly and integration with existing semiconductor technology, while maintaining the control of the tube size and heterojunction formation in the tube wall. I will discuss the formation process, large area assembly, and optical characterization of InxGa1-xAs/GaAs micro and nanotubes with active light emitting media incorporated in the tube wall. Device prospects of these tubes for nanophotonics will be explored.

Metal assisted chemical etching (MacEtch), an anisotropic wet etch method, produces high aspect ratio semiconductor nanostructures free of high energy ion induced damage in contrast to dry etch. I will show ordered vertical silicon and III-V nanowire or micropillar arrays fabricated by MacEtch and discuss the implication of this technology.

Location: Bowen Hall Atrium

Date/Time: 12/07/11 at 12:00 pm - 12/07/11 at 1:00 pm

Category: PRISM/PCCM Seminar Series

Department: PRISM