Both MA6 & MJB4 have been locked out. When you log in, the lockout system will activate the shutter, which enables the UV light to expose your substrate. When you log out, the shutter will stay closed, so no exposure is possible.
Micro/Nano Fabrication Laboratory (MNFL)
The Princeton Institute for the Science and Technology of Materials Micro/Nano Fabrication Laboratory is a shared research facility used by over 100 students, faculty, research staff, and industrial partners. Users work with variety of substrates to fabricate devices and structures for electronic, photonic, Micro Electro Mechanical System (MEMS) and biological applications.
Use the menu on the left to find out more about our lab, our tools, and how to gain access.
Lab and Equipment Status
Both the Laurell Spin Processor (for spin develop masks / wafers) and the Polos Spin Processor (for spin etch Cr masks / wafers ) are locked out. People who are trained before on the two systems are required to go through the training again, as their operation is slightly different.
The Laurell spinner is back online and locked out. Due to some changes in its operation, previously authorized users will have to go through the training process again.
Laurell spinner is capable of handling both masks and wafers. There are 4 recipes available:
1). 300MIF30s: Develop with 300MIF for 30s
2). 300MIF60s: Develop with 300MIF for 60s
3). AZ400K30s: Develop with AZ400K:D.I. H2O=1:4 fo
Laurell spinner is capable of handling both masks and wafers. There are 4 recipes available:
1). 300MIF30s: Develop with 300MIF for 30s
2). 300MIF60s: Develop with 300MIF for 60s
3). AZ400K30s: Develop with AZ400K:D.I. H2O=1:4 fo
Some parameters for the 4mm write head of Heidelberg has been updated.
The new power level is set to 90% (was 60%);
Spot size correction: x = -200nm; y = -200nm (was x = -150nm; y = -150nm);
Depth of Focus remains the same as before (DeFoc = 1950).
The above correction is based on developing the mask using the "AZ400KMask"
recipe on Laurell spinner, and etching it with "Program #1" on Polos spinner.
With the above setup/parameters, minimal features as small as 1um i
The new power level is set to 90% (was 60%);
Spot size correction: x = -200nm; y = -200nm (was x = -150nm; y = -150nm);
Depth of Focus remains the same as before (DeFoc = 1950).
The above correction is based on developing the mask using the "AZ400KMask"
recipe on Laurell spinner, and etching it with "Program #1" on Polos spinner.
With the above setup/parameters, minimal features as small as 1um i
The Raith ebeam is now back online. There were 2 problems associated with the tool:
1). beam drift
The drift was caused by a damaged end cap, which happened when the sample moved too close to the lens. Scratches were clearly visible on the cap.
As a reminder, for future use of Raith, please place your sample at a safe distance away from the lens. The column is optimized to work at 11mm WD. Smaller WD won't necessarily result in better resolution.
1). beam drift
The drift was caused by a damaged end cap, which happened when the sample moved too close to the lens. Scratches were clearly visible on the cap.
As a reminder, for future use of Raith, please place your sample at a safe distance away from the lens. The column is optimized to work at 11mm WD. Smaller WD won't necessarily result in better resolution.
Announcements
Featured Equipment
We replaced our old MJB3 with the new MJB4 mask aligner. The aligner is designed to provide maximum flexibility required in a R&D laboratory environment.