STS Metal Etcher
Classification: Dry Etch
Equipment: STS ICP Metal Etcher
Operating Instructions and Training:
Please contact MNFL staff for training.
Operating Instructions (STS ICP Metal Etcher)
Short Operating Instructions (STS Metal Etcher)
For additional information regarding this machine, please contact the PRISM Staff at: MNFL-Staff@princeton.edu.
General Information and Usage
The STS is a state of the art inductively coupled plasma etcher (Figure 1). The tool has been configured to enable users to etch Al, Cr, Ti, W, and Nb with a photoresist mask. The tool is plumbed with SF6, CHF3, Ar, O2, Cl2 and BCl3 gases. It possesses a He mechanically clamped backside cooled chuck that is temperature controlled with a chilled water circulator.
Specimens are loaded into the process chamber by a robot arm through a load lock to minimize contaminants entering the process chamber and to protect users from hazardous etch by-products. SEMI standard 100 mm diameter wafers can be processed in the system. Samples that are smaller than 100 mm in diameter must be mounted on a carrier wafer.
There are 2 RF power sources to control the properties of the plasma. The first is a 1000W supply inductively coupled to the gas in the process chamber. It generates a high density of radicals and ions with only a small potential between the plasma and the wafer surface. An additional 500W source induces a potential between the chuck and the plasma just like a traditional RIE system. The advantage of this combination is that the plasma density and the substrate bias can be independently controlled.
The system is controlled by a programmable controller mounted on the wall behind the tool. The user interface is a touchscreen mounted on the front of the electronics rack.
Click here to view a map to STS.
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