Cambridge NanoTech Savannah 100 Atomic Layer Deposition System
Manufacturer: Cambridge NanoTech
Equipment: Atomic layer deposition
Use: Deposition of Al2O3
The Savannah 100 Atomic Layer Deposition (ALD) system is used for the deposition of aluminum oxide on silicon. This is achieved by pulsing between the precursor, trimethylaluminum (TMA) and water vapor. Atomic layer deposition is a self-limiting process capable of precise monolayer growth. The system can handle wafers up to 4 inch diameter. The maximum deposition temperature is ~ 300ºC.
- SiGeC, GaAs and its compounds
- InP and its compounds
- SiO2 or glass, cleaned
- Al2O3 (sapphire)
- Au (gold)
- Al (aluminum)
Prohibited materials: indium, tin, zinc, iron, and organics (any type of resist, BCB, polyimide, epoxy, tape, vacuum grease, rubber, plastic, etc.)
Click here to view a map to the Savannah 100 ALD system.
Operating Instructions and Training
Please follow the provided authorization and training form.
Cleaning procedure for samples: This cleaning procedure must be followed for all materials without exception. A minimum of 3 times each of TCE (tricloroethylene), acetone, methanol, and DI water, including handling tools and carriers. RCA clean is preferred.
Contact Information for Users
For additional information regarding this machine, please contact the PRISM Staff at: MNFL-Staff@princeton.edu.