SAMCO RIE200iP
Manufacturer: SAMCO International
Classification: Dry Etch
Equipment: Inductively coupled plasma etching
Uses:
- Etching of InP, GaAs, and other III-V compounds, SiNx, SiO2, and photoresist
- Etch gases Cl2, SiCl4, BCl3, Ar, CF4, CHF3, and O2
General Information
The SAMCO International RIE200iP is a state of the art inductively coupled plasma etcher. Users may etch a dielectric hardmask, strip photoresist, and etch III-V materials such as GaAs, InP, and related alloys with either a resist or a dielectric mask.
The tool is plumbed with Cl2, BCl3, SiCl4, Ar, O2, CF4, and CHF3. It possesses a He backside cooled electrostatic chuck that is temperature controlled with an oil circulator capable of maintaining the chuck temperature in the range of 40C to 250C. Specimens are loaded into the process chamber by a robot arm through a load lock to minimize the amount of oxygen entering the process chamber and to protect users from hazardous etch byproducts.
Wafers of 50mm, 100mm, or 150mm diameter can be processed in the system with an appropriate change of parts in the process chamber. Samples that are not of the standard wafer sizes listed must be mounted on a carrier wafer.
There are 2 RF power sources to control the properties of the plasma. The first is a 1000W supply inductively coupled to the gas in the process chamber. It generates a high density of radicals and ions with only a small potential between the plasma and the wafer surface. An additional 300W source induces a potential between the chuck and the plasma just like a traditional RIE system. The advantage of this combination is that the plasma density and the substrate bias can be independently controlled.
Click here to view a map to the SAMCO RIE200iP.
Operating Instructions and Training
Please follow the provided authorization and training form.
Contact Information for Users
For additional information regarding this machine, please contact the PRISM Staff at: MNFL-Staff@princeton.edu
Authorized Users
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