Manufacturer: SAMCO International
Classification: Dry Etch
Equipment: Inductively coupled plasma etching
-Deep etching Si and SiO2, and resist stripping
-Etch gases O2, C4F8, CF4, and SF6
Operating Instructions and Training:
Please follow the provided authorization and training form.
For additional information regarding this machine, please contact the PRISM Staff at: MNFL-Staff@princeton.edu.
General Information and Usage
The SAMCO International RIE800iPB is a state of the art inductively coupled plasma etcher, optimized for deep Si etching using the Bosch process.
Click here to view a map to the SAMCO RIE800iPB.
Process Control Charts
Process: A 4” Si wafer, coated with AZ1518 photoresist and processed for the Suss MA6 control chart, is etched using Recipe 91, “20 um Trench” for 80 cycles. The photoresist thickness is measured before and after etch with the Nanospec reflectometer. The etch depth is measured with the KLA-Tencor P15 profilometer. The etch depth plotted below is the difference between the KLA step height and the remaining photoresist thickness.