Technics / Micro 800
Classification: Dry Etch
Equipment: Reactive ion etching
- Etching of thin films, SiNx, SiO2, photoresist, and other materials (see staff)
- Etch gases O2, CF4+5%O2, and SF6
Operating Instructions and Training:
Please follow the provided authorization and training form. See the MNFL staff for superuser observation.
For additional information regarding this machine, please contact the PRISM Staff at: MNFL-Staff@princeton.edu.
General Information and Usage
Micro 800 RIE is a parallel plate reactive ion etcher equipped with 3 gases: O2, and CF4+5%O2, and SF6. The etcher is designated for the photoresist ashing, surface cleaning, etching polymer substrates, and for etching metals and other materials that react with Fluorine plasmas. There is no throttle valve to control the pressure and the gas flow is adjusted by a needle valve. As a result of the parallel plate design, the etch rate is higher than in theTePla M4L etcher. However, the substrate size is limited due to the gas feed in the center of the bottom electrode.
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