TePla / M4L
Manufacturer: TePla America
Classification: Dry Etch
Equipment: Reactive ion etching
- Surface treatment and cleaning, photoresist stripping, etching of plastics
- Etch gases CF4, O2, Ar
The TePla M4L plasma etcher is a batch-mode plasma system for etch, strip, clean, and surface treatment. The etcher is designated for photoresist ashing, surface cleaning, and surface treatment and etching of plastic substrates. The following gases are installed: O2, Ar, and CF4. The flow rate for each gas is set by a mass-flow controller (MFC), and the pressure is controlled separately by a throttle valve between the chamber and the pump. The maximum RF power is 600 W, but use caution when etching plastic substrates. The etcher is equipped with a thermocouple to monitor the temperature. All system functions are controlled from the computer running on Windows NT. The program has both manual and automatic modes. Users should program frequently used sequences and run them in an automatic mode.
Click here for a map to the TePla / M4L
Operating Instructions and Training
Please follow the provided authorization and training form.
Contact Information for Users
For additional information regarding the this machine, please contact the PRISM Staff at: MNFL-Staff@princeton.edu.