Nanoimprint Lithography

Nanoimprint lithography, invented at the NSL in 1994, is a major breakthrough in nanopatterning because it can produce sub-10nm feature size over a large area with a high throughput and low cost -- a feat impossible with current, coventional lithography.

Nanoimprint lithography patterns a resist by deforming the resist shape through embossing (with a mold), rather than by altering resist chemical structures through radiation (with particle beams). After imprinting the resist, an anisotropic etching is used to remove the residue resist in the compressed area to expose the underneath substrate. Currently, we have achieved 10nm diameter holes and 40nm pitch in PMMA on Si or a metal substrate and excellent uniformity over 1 square inch.

Imprint mold with 10nm
diameter pillars

10nm diameter holes imprinted in PMMA

10nm diameter metal dots fabricated by NIL

Our research focuses on development of machines, molds, polymers, rheology, and process optimization for NIL, as well as on application of NIL in a variety of other fields.