Nanoelectronics


It has become very clear that the trend in downscaling transistors will end in 10 to 15 years since the transport equations that govern the operation of conventional transistors and interconnects are no longer valid in devices with nanometer dimenstions. To continue the evaluation of ultra-fast and ultra-dense microelectronics, we must search for revolutionary devices and IC architectures based on new operation principles. Ideally, these new devices should not only be ultrasmall and fast, but also have high functionality and be capable of performing parallel computing.


Sub-100 nm MOSFETs in SiGe and SOI

High Functionality Devices in Si and SiGe

Quantum Dot Transistor

Room Temperature Single Electron MOS Memory


Current Personnel:


[1] Jian Gu
[2] Larry Zhuang
[3] Wei Wu


Former Personnel:

[1] Effendi Leobandung
[2] Yun Wang
[3] Aron E. Gordon
[4] Zhaoping Jiang
[5] Paul R. Fisher
[6] Jeff Boettcher
[7] Lingjie Guo


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For questions e-mail chou@ee.princeton.edu