Single electron and quantum effect transistors

    Quantum and single electron charging effects are bringing new functionalities into transistors. The new transistors can reduce the number of transistors per circuit function and open up opportunities for innovative architectures. However, in field effec t transistors, manifestation of quantum effects and single-electron Coulomb blockade usually requires extremely low temperatures such as sub-liquid helium temperatures. Furthermo re, the quantum effect and Coulomb blockade transistors are typically fabricated in III-V compound semiconductors instead of Si - the backbone material of the integrated circuit (IC) industry.
    To make the quantum effects and single-electron Coulomb blockade transistors practical for circuits applications, the room-temperature operation and made-in-silicon are essential. This can be achieved if the silicon transistors have a featur e size of about 10 nm.
   
    By clicking on the links below you can find viewgraphs describing results of research performed at Nanostructure Laboratory on such kind of quantum dot transistors.

• HighLights


• Single Electron Tunneling


• Advantages of QDT in SOI


• Quantum Confinement and Charging Effect


• Quantum-Dot Transistor on SOI


• Scanning Electron Micrograph of a Si Quantum-Dot Transistor


• Single Electron QDT in Linear Regime


• Si Single Hole QDT in Linear Regime


• Temperature Dependence


• Differential Conductance vs. Vg and Vds


• Transport through Excited States


• Parameters of Hole-QDT