(a) Experimental setup for valley susceptibility measurements. The sample is glued to one side of a piezoelectric (piezo) stack actuator, and strain is applied by simply biasing the piezo (V
P). The strain is measured via a strain gauge glued to the piezo's other side.
(b) Energy diagram showing the spin (E
Z) and valley (E
V) subband splittings induced with applied magnetic field or strain, respectively.
(c) Valley (closed circles) and spin (open circles) susceptibilities, normalized to their band values vs. 2D electron density.
Manipulating different degrees of freedom for electrons in semiconductors offers the promise of new and different kinds of electronic devices. For example, controlling carrier spin is the foundation for the emerging area of "spintronics", and could also impact the more futuristic area of quantum computing, since many of the current proposals envision spin as the quantum bit (qubit) of information. PCCM researchers have recently explored another such degree of freedom in a semiconductor where electrons occupy multiple conduction band minima (valleys). They developed a novel technique to measure the "valley susceptibility", χV, i.e., how the relative numbers of electrons shift in a two-valley, two-dimensional (2D) AlAs quantum well when symmetry-breaking mechanical deformation is applied. This quantity is directly analogous to the spin susceptibility, χS, which specifies how the spin populations are shifted by an applied magnetic field. The measured χV and χS are strikingly similar, both exhibiting an interaction-induced enhancement at low electron densities. The results establish the general analogy between the spin and valley degrees of freedom, implying the potential use of valleys in applications such as quantum computing.