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Seed Groups at PCCM 2002-2004

Back to Current Seed Groups

Superseed: Patterned Assembly Of Functional Cell-Based Biomaterials

Jean E. Schwarzbauer (Molecular Biology)
Jeffrey D. Carbeck (Chemical Engineering)
John T. Groves (Chemistry)
Michael H. Hecht (Chemistry)

 

We propose to combine de novo protein design with molecular-, micro- and meso-scale assembly to engineer novel interfaces that will support interactions between synthetic materials and living cells. A key feature of our approach is the organization of proteins on surfaces at multiple length scales and in a variety of formats. We focus specifically on integrating the function of skeletal muscle cells with synthetic materials. Together with surrounding extracellular adhesion proteins, skeletal muscle cells act as a unit to generate force through regulated contractions. Templates composed of proteins that support muscle cell adhesion will be used to organize these cells into patterned arrays that perform controlled contractions. Applications for such biologic/synthetic hybrid materials include micromachines as actuators or levers, in microfluidic devices as valves or pumps, and in miniaturized, remotely operated vehicles (robots), where the force-displacement capabilities of muscle cells could be used to provide motion.

Superseed: Heteroepitaxy and Electronic Structure of Semiconductor/High Dielectric Constant Oxides

A. Kahn (Electrical Engineering)
S. Forrest (Electrical Engineering)
R. McKee (Oak Ridge National Lab)
Y. Chabal (Agere)

 

The heteroepitaxy of semiconductor/high dielectric constant (k) crystalline oxide (CO) systems with low state density interfaces is an exceedingly important problem with far ranging implications and numerous applications. High-k CO insulators are a potential replacement of SiO2 in ultra-thin gate insulators for next generation Si devices and widely viewed as the most promising approach to maintaining past growth in integrated circuit complexity and functionality. McKee’s ground-breaking work on alkaline-earth and perovskite oxide layers on Si & Ge is providing strong momentum to the field. High-k COs are also key materials for new electronic devices employing III-V semiconductors like GaAs, which lack stable oxides, and for the integration of III-V photonic devices on Si integrated circuits. Motorola has recently shown that dielectric/III-V epitaxial systems may provide the basis for such direct integration. This project, aimed at understanding and controlling the structural and electronic properties of high-k CO interfaces at the atomic level, focuses on the heteroepitaxy and electronic structure of novel systems comprising Si, Ge or III-V compounds and high-k alkaline-earth and perovskite oxides (AO and ABO3; A=Ca, Sr, Ba; B=transition metal, e.g. Ti).

Seed: Characterization and Suppression of Nanobubbles Relevant to 193 nm Immersion Lithography

S. Troian (Chemical Engineering)
S. Wagner (Electrical Engineering)
S. Lyon (Electrical Engineering)
M. Switkes (MIT Lincoln Laboratory)
M. Rothschild (MIT Lincoln Laboratory)

Seed: Magnetic Resonance Imaging (MRI) of Heterogeneous Materials: Structure, Transport, Rheology & Dynamics

W. Warren (Chemistry)
S. Torquato (Chemistry)
P. Chaikin (Physics)

Seed: Nanoscale Inkjet Printing with Superfluid Helium

K. Lehmann (Chemistry)
S. Lyon (Electrical Engineering)
G. Scoles (Chemistry)
R. Car (Chemistry)
N. Yao (PRISM)

Seed: Materials Optimization

S. Torquato (Chemistry)
F. Stillinger (Chemistry)