Seed Groups at PCCM 2002-2004
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Groups
Superseed: Patterned Assembly Of Functional Cell-Based Biomaterials
Jean E. Schwarzbauer (Molecular Biology)
Jeffrey D. Carbeck (Chemical Engineering)
John T. Groves (Chemistry)
Michael H. Hecht (Chemistry)
We propose to combine de novo protein design with molecular-, micro-
and meso-scale assembly to engineer novel interfaces that will support
interactions between synthetic materials and living cells. A key
feature of our approach is the organization of proteins on surfaces
at multiple length scales and in a variety of formats. We focus
specifically on integrating the function of skeletal muscle cells
with synthetic materials. Together with surrounding extracellular
adhesion proteins, skeletal muscle cells act as a unit to generate
force through regulated contractions. Templates composed of proteins
that support muscle cell adhesion will be used to organize these
cells into patterned arrays that perform controlled contractions.
Applications for such biologic/synthetic hybrid materials include
micromachines as actuators or levers, in microfluidic devices as
valves or pumps, and in miniaturized, remotely operated vehicles
(robots), where the force-displacement capabilities of muscle cells
could be used to provide motion.
Superseed: Heteroepitaxy and Electronic Structure of Semiconductor/High
Dielectric Constant Oxides
A. Kahn (Electrical Engineering)
S. Forrest (Electrical Engineering)
R. McKee (Oak Ridge National Lab)
Y. Chabal (Agere)
The heteroepitaxy of semiconductor/high dielectric constant (k)
crystalline oxide (CO) systems with low state density interfaces
is an exceedingly important problem with far ranging implications
and numerous applications. High-k CO insulators are a potential
replacement of SiO2 in ultra-thin gate insulators for
next generation Si devices and widely viewed as the most promising
approach to maintaining past growth in integrated circuit complexity
and functionality. McKee’s ground-breaking work on alkaline-earth
and perovskite oxide layers on Si & Ge is providing strong momentum
to the field. High-k COs are also key materials for new electronic
devices employing III-V semiconductors like GaAs, which lack stable
oxides, and for the integration of III-V photonic devices on Si
integrated circuits. Motorola has recently shown that dielectric/III-V
epitaxial systems may provide the basis for such direct integration.
This project, aimed at understanding and controlling the structural
and electronic properties of high-k CO interfaces at the atomic
level, focuses on the heteroepitaxy and electronic structure of
novel systems comprising Si, Ge or III-V compounds and high-k alkaline-earth
and perovskite oxides (AO and ABO3; A=Ca, Sr, Ba; B=transition
metal, e.g. Ti).
Seed: Characterization and Suppression of Nanobubbles Relevant
to 193 nm Immersion Lithography
S. Troian (Chemical Engineering)
S. Wagner (Electrical Engineering)
S. Lyon (Electrical Engineering)
M. Switkes (MIT Lincoln Laboratory)
M. Rothschild (MIT Lincoln Laboratory)
Seed: Magnetic Resonance Imaging (MRI) of Heterogeneous Materials:
Structure, Transport, Rheology & Dynamics
W. Warren (Chemistry)
S. Torquato (Chemistry)
P. Chaikin (Physics)
Seed: Nanoscale Inkjet Printing with Superfluid Helium
K. Lehmann (Chemistry)
S. Lyon (Electrical Engineering)
G. Scoles (Chemistry)
R. Car (Chemistry)
N. Yao (PRISM)
Seed: Materials Optimization
S. Torquato (Chemistry)
F. Stillinger (Chemistry)
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