Patterning of Organic Materials for Organic Electronic Devices
IRG 3: Changsoon Kim, Yifang Cao, Winston O. Soboyejo, Stephen R. Forrest
Top: Schematic of incomplete material transfer (left). W nc is the width of the noncontact region; t org is the thickness of the organic layer on the stamp. When the adhesive stress (σ) between a-NPD and Au reaches its critical value before the shear stress exceeds the strength of the organic film, the layer on the stamp is fractured, leaving a defect region of width, W d (right).
Bottom: Fabrication of an organic light-emitting device (OLED) array by transferring a bilayer of Alq3 and a-NPD from the stamp onto a patterned substrate (right).
A team of Princeton researchers has developed an improved technique
for manufacturing novel electro-optical devices from organic semiconductors. The method relies
on a modeling framework to describe different material transfer modes that occur when the
organic materials are "stamped" onto an already patterned substrate. Using this model, the
Princeton team was able to cleanly transfer an organic thin film from a stamp to a patterned
substrate without leaving any voids.
References: C. Kim, Y. Cao, W. O.
Soboyejo, S. R. Forrest, J. Applied Phys. 97, 113512 (2005).
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