From Single Layer to Multilayer Silicene
Speaker: Guy Le Lay, Aix-Marseille University, France
Department: Electrical Engineering
Location: Engineering Quadrangle B418
Date/Time: Monday, May 13, 2013, 11:00 a.m. - 12:00 p.m.
: Born in 2012 on a silver plate , artificially created by epitaxy on different metallic substrates since it does not exist in nature, silicene, graphene's silicon cousin, offers many exciting promises. This is due, typically, to its Dirac fermions with trigonal or hexagonal wrapping and very high Fermi velocity, its two-dimensional topological insulator character, a hint for high-temperature superconductivity, and, last but not least, its direct compatibility with current silicon-based electronics.
However, the significant task to isolate free-standing silicene sheets has not yet been achieved. We will present a first step in this endeavor, since we have succeeded in growing silicene multi-layer stacks, i.e., graphite-like silicon. We could characterize this novel silicon allotrope by comparing simultaneously acquired nc-AFM and STM observations in conjunction with STS and PES measurements .
In my talk, I will present these last results and draw perspectives for future research and potential applications.
 Silicene: Compelling Experimental Evidence for Graphenelike Two-Dimensional Silicon P. Vogt, P. De Padova, C. Quaresima, J. Avila, E. Frantzeskakis, M. C. Asensio, A. Resta, B. Ealet, and G. Le Lay, Phys. Rev. Lett., 108, 155501 (2012).
 Evidence of Dirac fermions in multilayer silicene P. De Padova, P. Vogt, A. Resta, J. Avila, I. Razado-Colambo, C. Quaresima, C. Ottaviani, B. Olivieri, T. Bruhn, T. Hirahara, T. Shirai, S. Hasegawa, M. C. Asensio and G. Le Lay, Appl. Phys. Lett., 102, 163106 (2013).