Mechanically Flexible Vertically Integrated a-IGZO Thin-Film Transistors with 500 nm Channel Length Fabricated on Freestanding Plastic Foil
Speaker: Luisa Petti, Technical University in Zurich (ETHZ)
Department: Electrical Engineering
Location: Engineering Quadrangle B327
Date/Time: Friday, December 13, 2013, 3:00 p.m. - 4:00 p.m.
We report the first mechanically flexible amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) vertical thin-film transistors (VTFTs) with 500 nm channel length, fabricated on a free-standing plastic foil, using a low temperature process <150°C. The VTFTs exhibit a well-shaped transfer characteristic, with an on/off current ratio >107 and a threshold voltage of 2.2 V. We demonstrate full device functionality down to 5 mm bending radius, even after 1000 bending cycles. These results prove that VTFTs are feasible for realizing compact and bendable electronic systems.