Antimonide-Based Compound Semiconductors for High Speed, Lower Power Electronics
Speaker: Laura Ruppalt, U.S. Naval Research Laboratory
Department: Electrical Engineering
Location: Engineering Quadrangle B418
Date/Time: Monday, December 9, 2013, 2:00 p.m. - 3:00 p.m.
Antimonide-based compound semiconductors, as well as the arsenides that share their 6.1-6.2 angstrom lattice constant, are increasingly viewed as promising candidates for advanced electronic devices. Their high carrier mobilities, coupled with their narrow bandgaps, make these materials well-suited to analog and digital applications requiring high speeds and low power consumption. Over the previous decade, the U.S. Naval Research Laboratory (NRL) has supported a variety of research efforts aimed towards the maturation of antimonide-based materials and devices. In this talk, I will provide an overview of NRLs recent research in antimonide-based materials for electronic applications, focusing particularly on recent device developments and approaches for dielectric integration using atomic layer deposition techniques.