Senior Research Scholar in Electrical Engineering
Ph.D. 1967, Johns Hopkins University
We use ultra-clean techniques in Molecular Beam Epitaxy (MBE) to fabricate gallium arsenide--aluminum gallium arsenide semiconductor heterostructures of exceptionally high quality. Modulation-doped GaAs quantum wells made in our laboratory have shown the highest carrier mobilities ever reported for any semiconductor. We have also developed an extension of MBE called Cleaved-Edge-Overgrowth that has enabled fabrication of MBE nanostructures with near ideal electrical interfaces.