Gallium(III) arsenide

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1238 °C (1511 K)

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III/V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells, and optical windows.

Contents

Preparation and chemistry

In the compound, gallium has a +3 oxidation state. Gallium arsenide can be prepared by direct reaction from the elements which is used in a number of industrial processes:[3]

  • Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react and free molecules deposit on a seed crystal at the cooler end of the furnace.
  • Liquid encapsulated Czochralski (LEC) growth is used for producing high purity single crystals that exhibit semi-insulating characteristics.

Alternative methods for producing films of GaAs include:[3][4]

Wet etching of GaAs industrially uses an oxidizing agent, for example hydrogen peroxide or bromine water,[5] and the same strategy has been described in a patent relating to processing scrap components containing GaAs where the Ga3+ is complexed with a hydroxamic acid ("HA"), for example:[6]:

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