·  The electronics industry is interested in producing very small structures that can be a part of an electronic device. Such nanostructures in silicon may be fabricated by using the spatial properties of dislocations and their increased chemical reactivity.

·  The diagrams show the regular array of screw dislocations that arise from a pure twist boundary in a silicon crystal. This device is fabricated by bonding a very thin crystal of silicon to a bulk substrate with a selected missalignment, θ. The size of the array shown in the top diagram depends upon this angle - decreasing in linear dimension as θ increases.