Journal Articles:

1. T.J. Stultz, J.C. Sturm, J.F. Gibbons, and S.K. Ichiki, "Rapid annealing of silicon with a scanning cw Hg lamp," J. Appl. Phys. 53, pp. 7109-7111 (1982).
2. J.C. Sturm, M.D. Giles, and J.F. Gibbons, "A three-dimensional folded dynamic RAM in beam-recrystallized polysilicon," IEEE Elec. Dev. Lett. EDL-5, pp. 151-153 (1984).
3. J.C. Sturm, J.D. Plummer, and J.F. Gibbons, "Measurement and reduction of interface states at the recrystallized silicon-underlying insulator interface," Appl. Phys. Lett. 46, pp. 1171-1173 (1985).
4. J.C. Sturm and J.F. Gibbons, "Vertical bipolar transistors in laser-recrystallized polysilicon," IEEE Elec. Dev. Lett. EDL-6, pp. 400-402 (1985).
5. C.H. Ting, W. Baerg, H.Y. Lin, B. Siu, T. Hwa, J.C. Sturm, J.F. Gibbons, "A seeded channel silicon-on-insulator MOS technology," IEEE Elec. Dev. Lett. EDL-6, pp. 668-670 (1985).
6. J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Limited reaction processing: in-situ metal-oxide-semiconductor capacitors," IEEE Elec. Dev. Lett. EDL-7, pp. 282-284 (1986).
7. C.M. Gronet, J.C. Sturm, K.E. Williams, J.F. Gibbons, and S.D. Wilson, "Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing," Appl. Phys. Lett. 48, pp. 1012-1014 (1986).
8. J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Minority carrier properties of thin epitaxial silicon films fabricated by limited reaction processing," J. Appl. Phys. 59, pp. 4180-4182 (1986).
9. J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "In-situ epitaxial silicon-oxide-doped polysilicon structures for MOS field-effect transistors," IEEE Elec. Dev. Lett. EDL-7, pp. 577-579 (1986).
10. J.C. Sturm, J.P. McVittie, J.F. Gibbons, and L. Pfeiffer, "A lateral silicon-on-insulator bipolar transistor with a self-aligned base contact," IEEE Elec. Dev. Lett. EDL-8, pp. 104-106 (1987).
11. J.C. Sturm, K. Tokunaga, and J.-P. Colinge, "Increased drain saturation current in ultra-thin silicon-on-insulator (SOI) MOS transistors," IEEE Elec. Dev. Lett. EDL-9, pp. 460-463 (1988).
12. J.C. Sturm, E.J. Prinz, P.M. Garone, and P.V. Schwartz, "Bandgap shifts in silicon-germanium heterojunction bipolar transistors," Appl. Phys. Lett. 54, pp. 2707-2709 (1989).
13. J.C. Sturm and K. Tokunaga, "Dependence of transconductance on substrate bias in ultrathin silicon-on-insulator MOS transistors," Electronics Lett. 25, pp. 1233-1234 (1989).
14. J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Silicon temperature measurement by infrared transmission for rapid thermal processing applications," Appl. Phys. Lett. 56, pp. 961-964 (1990).
15. P.M. Garone, J.C. Sturm, P.V. Schwartz, S.A. Schwarz, and B. Wilkens, "Silicon vapor-phase epitaxial growth catalysis by the presence of germane," Appl. Phys. Lett. 56, pp. 1275-1277 (1990).
16. P.V. Schwartz and J.C. Sturm, "Microsecond carrier lifetimes in strained silicon-germanium alloys grown by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 57, pp. 2004-2006 (1990).
17. J.C. Sturm, P.M. Garone, and P.V. Schwartz, "Temperature control of silicon-germanium epitaxial growth on silicon substrates by infrared transmission," J. Appl. Phys. 69, pp. 542-544 (1991).
18. E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao, and J.C. Sturm, "The effect of base dopant outdiffusion and base-emitter spacers on the performance of Si/Si1-x Gex/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-12, pp. 42-44 (1991).
19. Z. Matutinovic-Krstelj, E.J. Prinz, and J.C. Sturm, "Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-12, pp. 163-165 (1991).
20. P.M. Garone, V. Venkataraman, and J.C. Sturm, "Hole confinement in MOS-gated Gex/Si1-x/Si heterostructures," IEEE Elec. Dev. Lett. EDL-12, pp. 230-232 (1991).
21. J.C. Sturm, E.J. Prinz, and C.W. Magee, "Graded-base Si/Si1-xGex/Si heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition with near ideal electrical characteristics," IEEE Elec. Dev. Lett. EDL-12, pp. 303-305 (1991).
22. X. Xiao, J.C. Sturm, K.K. Goel, and P.V. Schwartz, "Fabry-Perot optical intensity modulator at 1.3 mm in Silicon," IEEE Photonics Tech. Lett. PTL-3, pp. 230-232 (1991).
23. J.C. Sturm, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, N.L Rowell, J.-P. Noel, and D.C. Houghton, "Well-resolved band-edge photoluminescence of excitons confined in strained Si1-xGex quantum wells," Phys. Rev. Lett. 66, pp. 1362-1365 (1991).
24. J.C. Sturm, P.V. Schwartz, E.J. Prinz, and H. Manoharan, "Growth of Si1-x Gex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors," J. Vac. Sci. Tech. B 9, pp. 2011-2016 (1991).
25. K. Tokunaga and J.C. Sturm, "Substrate bias dependence of subthreshold slopes in fully-depleted silicon-on-insulator MOSFET's," IEEE Trans. Elec. Dev. TED-38, pp. 1803-1807 (1991).
26. (Invited) J.C. Sturm, "Growth and applications of epitaxial Si1-x Gex alloys grown by rapid thermal chemical vapor deposition," JOM (J. Metals) 43, No. 10, pp. 43-47 (1991).
27. E.J. Prinz and J.C. Sturm, "Current gain-early voltage products in heterojunction bipolar transistors with non-uniform base bandgaps," IEEE Elec. Dev. Lett. EDL-12, pp. 661-663 (1991).
28. V. Venkataraman, P.V. Schwartz, and J.C. Sturm, "Symmetric Si/Si1-x Gex two-dimensional hole gases grown by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 59, pp. 2871-2873 (1991).
29. P.M. Garone, V. Venkataraman, and J.C. Sturm, "Hole mobility enhancement in MOS-gated GexSi1-x/Si heterostructure inversion layers," IEEE Elec. Dev. Lett. EDL-13, pp. 56-59 (1992).
30. J.C. Sturm and C.M. Reaves, "Silicon temperature measurement by infrared absorption: fundamental processes and doping effects," IEEE Trans. Elec. Dev. TED-39, pp. 81-88 (1992).
31. X. Xiao, J.C. Sturm, C.W. Liu, L.C. Lenchyshyn, M.L.W. Thewalt, R.B. Gregory, P. Fejes, "Quantum confinement effects in strained silicon-germanium alloy quantum wells," Appl. Phys. Lett.60, pp. 2135-2137 (1992).
32. X. Xiao, J.C. Sturm, C.W. Liu, L.C. Lenchyshyn, and M.L.W. Thewalt, "Photoluminescence from electron-hole plasmas confined in Si1-xGex quantum wells, "Appl. Phys. Lett. 60, pp. 1720-1722 (1992).
33. Q. Mi, X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Room-temperature 1.3 mm electroluminescence from strained Si1-xGex quantum wells," Appl. Phys. Lett. 60, pp. 3177-3179 (1992).
34. L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, E.J. Prinz, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "High efficiency photoluminescence from localized excitons in Si1-xGex," Appl. Phys. Lett. 60, pp. 3174-3176 (1992).
35. K. Tokunaga and J.C. Sturm, "Anomalous subthreshold slopes in thin-film accumulation-mode SOI p-channel MOSFET's," IEEE Trans. Elec. Dev. TED-39, pp. 2413 (1992).
36. L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, E.J. Prinz, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "High quantum efficiency photoluminescence spectroscopy of localized excitons in Si1-xGex," J. Elec. Mat. 22, pp. 223 (1993).
37. Z. Matutinovic-Krstelj, C.W. Liu, X. Xiao, and J.C. Sturm, "Symmetric Si/Si1-xGex electron resonant tunneling diodes with an anomalous temperature behavior," Appl. Phys. Lett. 62, pp. 603-605 (1993).
38. L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, and X. Xiao, "Photoluminescence study of vertical transport in Si1-x Gex/Si heterostructures," Phys. Rev. 47, pp. 16,659-16,662 (1993).
39. L.C. Lenchyshyn, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Photoluminescence mechanisms in thin Si1-xGex quantum wells," Phys. Rev. B 47, pp. 16,655-16,658 (1993).
40. P.V. Schwartz, C.W. Liu, and J.C. Sturm, "Semi-insulating crystalline silicon formed by oxygen doping during low-temperature chemical vapor deposition," Appl. Phys. Lett. 62, pp. 1103-1105 (1993).
41. X. Xiao, J.C. Sturm, S.J. Parihar, S.A. Lyon, D. Meyerhofer, S. Palfrey, and F.V. Shallcross, "Silicide/strained Si1-xGex schottky-barrier infrared detectors," IEEE Elec. Dev. Lett. EDL-14, pp. 199-201 (1993).
42. V. Venkataraman, C.W. Liu, and J.C. Sturm, "Alloy-scattering limited transport of two-dimensional carriers in strained Si1-x Gex quantum wells," Appl. Phys. Lett. 63, pp. 2795-2797 (1993).
43. J.C. Sturm, A. St. Amour, Q. Mi, L.C. Lenchyshyn, and M.L.W. Thewalt, "High temperature (77 - 300K) photo- and electro-luminescence in Si1-xGex heterostructures," Jap. J. Appl. Phys. 33, pp. 2329-2334 (1994).
44. J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and M.M. Weeks, "Pt and Ir silicides on SiGe for infrared detectors," J. Appl. Phys. 75, pp. 5160-5164 (1994).
45. P.V. Schwartz and J.C. Sturm, "Oxygen incorporation during low-temperature chemical vapor deposition growth of epitaxial silicon films," J. Electrochem. Soc. 141, pp. 1284-1290 (1994).
46. V. Higgs, E.C. Lightowlers, X. Xiao, and J.C. Sturm, "Characterization of Si/Si1-x Gex/Si quantum wells by cathodoluminescence imaging and spectroscopy," Appl. Phys. Lett. 64, pp. 607-609 (1994).
47. J.C. Sturm, A. St. Amour, Y. Lacroix, and M.L.W. Thewalt, "Deep photoluminescence in Si/Si1-xGex/Si quantum wells created by ion implantation and annealing," Appl. Phys. Lett. 64, pp. 2291-2293 (1994).
48. C.W. Liu, J.C. Sturm, Y. Lacroix, M.L.W. Thewalt, and D.D. Perovic, "Growth and bandgap of strained <110> Si1-x Gex layers on silicon substrates by chemical vapor deposition," Appl. Phys. Lett. 65, pp. 76-78 (1994).
49. A. St. Amour, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Enhancement of high-temperature photoluminescence in strained Si1-xGex/Si heterostructures by surface passivation," Appl. Phys. Lett. 65, pp. 3344-3346 (1994).
50. Y.M. Liu, X. Xiao, J.C. Sturm, and P.R. Prucnal, "All optical switching in an asymmetric silicon fabry-perot etalon based on the free-carrier plasma effect," Applied Optics 33, pp. 3871-3874 (1994).
51. Z. Matutinovic-Krstelj, E. Chason, and J.C. Sturm, "Growth pressure effects on Si/Si1-xGex chemical vapor deposition," J. Elec. Mat. 24, pp. 725-730 (1995).
52. C.C. Wu, J.K.M. Chun, P.E. Burrows, J.C. Sturm, M.E. Thompson, S.R. Forrest, and R.A. Register, "Poly(P-phenylene vinylene)/tris (8-hydroxy)quinoline aluminum heterostructure light emitting diode," Appl. Phys. Lett. 66, pp. 653-655 (1995).
53. J. Tian, C.C. Wu, M.E. Thompson, J.C. Sturm, R.A. Register, M.J. Marsella, and T.M. Swager, "Electroluminescent properties of self-assembled polymer thin films," Advanced Materials 7, pp. 395-398 (1995).
54. J.R. Jimenez, X. Xiao, J.C. Sturm, and P.W. Pellegrini, "Tunable long-wavelength PtSi/SiGe/Si Schottky diode infrared detectors," Appl. Phys. Lett. 67, pp. 506-608 (1995).
55. J.C. Sturm, I.-W. Wu, and M. Hack, "Leakage current modeling of series-connected thin film transistors," IEEE Trans. Elec. Dev. TED-42, pp. 1561-1563 (1995).
56. C.W. Cullen and J.C. Sturm, "Temperature measurement of metal-coated silicon wafers by double-pass infrared transmission," IEEE Trans. Semicond. Manufact. 8, pp. 346-351 (1995).
57. (Invited) A. St. Amour and J.C. Sturm, "Numerical simulation of the temperature dependence of photoluminescence in strained-Si1-xGex/Si heterostructures," J. Materials Science: Materials in Electronics 6, pp. 350-355 (1995).
58. A. St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Defect-free band-edge photoluminescence and bandgap measurement of pseudomorphic Si1-x-yGexCy alloy layers on Si(100)," Appl. Phys. Lett. 67, pp. 3915 (1995).
59. A. St. Amour, C.W. Liu, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Erratum: "Defect-free band-edge photoluminescence and band gap measurement of pseudomorphic Si1-x-y Gex Cy alloy layers on Si (100)," [Appl. Phys. Lett. 67, 3915 (1995)]" Appl. Phys. Lett. 68, p. 1169 (1996).
60. J. Tian, C.C. Wu, M.E. Thompson, J.C. Sturm, and R.A. Register, "Photophysical properties, self-assembled thin films and light-emitting diodes of poly(p-pyridylvinylene)'s and poly(p-pyridinium vinylene)'s," Chemistry of Materials 7, pp. 2190-2198 (1995).
61. Z. Matutinovic-Krstelj, V. Venkataraman, E.J. Prinz, J.C. Sturm, and C.W. Magee, "Base resistance and effective bandgap reduction in npn Si/Si1-xGex/Si HBT's with heavy base doping," IEEE Trans. Elec. Dev. TED-43, pp. 457-466 (1996).
62. L.D. Lanzerotti, A. St. Amour, C.W. Liu, J.C. Sturm, J.K. Watanabe, and N.D. Theodore, " Si/Si1-x-yGexCy/Si heterojunction bipolar transistors," IEEE Elec. Dev. Lett. EDL-71, pp. 334-337 (1996).
63. K. Pangal, S.L. Firebaugh, and J.C. Sturm, "Nonivasive measurement of charging in plasmas using microelectromechanical charge sensing devices," Appl. Phys. Lett. 69, pp. 1471-1473 (1996).
64. C.W. Liu, A. St. Amour, J.C. Sturm, Y.R.J. Lacroix, J.L.W. Thewalt, C.W. Magee, and D. Eaglesham, "Growth and photoluminescence of high quality SiGeC random alloys of silicon substrates," J. Appl. Phys. 80, pp. 3043-3047 (1996).
65. C.C. Wu, J.C. Sturm, and R.A. Register, "Integrated three-color organic light-emitting devices," Appl. Phys. Lett. 69, pp. 3117-3119 (1996).
66. C.C. Wu, J.C. Sturm, R.A. Register, J. Tian, E.P. Dona, and M.E. Thompson, "Efficient organic electroluminescent devices using single-layer doped polymer thin films with bipolar transport abilities," IEEE Trans. Elec. Dev. TED-44, pp. 1269-1281 (1997).
67. C.W. Liu and J.C. Sturm, "Low-temperature CVD growth of *-SiC on (100) Si using methylsilane and device characteristics," J. Appl. Phys. 82, pp. 4558-4565 (1997).
68. M. Yang, J. C. Sturm, and J. Prevost, "Calculation of band alignments and quantum confinement effects in zero- and one-dimensional pseudomorphic structures," Phys. Rev. B 56, pp. 1973-1980 (1997).
69. C.C. Wu, C.I. Wu, J.C. Sturm, and A. Kahn, "Surface modification of indium tin oxide by plasma treatment: an effective method to improve the efficiency, brightness and reliability of organic light emitting devices," Appl. Phys. Lett. 70, pp. 1348-1350 (1997).
70. R.A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St. Amour, and J.C. Sturm, "Co silicide formation on SiGeC/Si and SiGe/Si layers," Appl. Phys. Lett. 70, pp. 1266-1268 (1997).
71. L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation," Appl. Phys. Lett. 70, pp. 3125-3126 (1997).
72. C.C. Wu, S.D. Theiss, G. Gu, M.H. Lu, J.C. Sturm, S. Wagner, and S.R. Forrest, "Integration of organic LEDs and amorphous Si TFT's onto flexible and lightweight metal foil substrates," IEEE Elec. Dev. Lett. EDL-18, pp. 609-611 (1997).
73. (Invited) A. St. Amour, L.D. Lanzerotti, C.C. Chang, and J.C. Sturm, "Optical and electrical properties of Si1-x-yGexCy thin films and devices," Thin Sold Films 294, pp. 112-117 (1997).
74. C.L. Chang, A. St. Amour, and J.C. Sturm, "The effect of carbon on the valence band offset of compressively strained Si1-x-yGexCy/(100) Si heterojunctions," Appl. Phys. Lett. 70, pp. 1557-1559 (1997).
75. M.S. Carroll, C.L. Chang, and J.C. Sturm "Complete suppression of boron transient-enhanced diffusion and oxidation-enhanced diffusion in silicon using localized substitutional carbon incorporation," Appl. Phys. Lett. 73, pp. 3695-3697 (1998).
76. T.R. Hebner, C.C. Wu, D. Marcy, M.H. Lu, and J.C. Sturm, "Ink-jet printing of doped polymers for organic light emitting devices," Appl. Phys. Lett. 72, pp. 519-521 (1998).
77. (Invited) J.C. Sturm, "Advanced column-IV epitaxial materials for silicon-based optoelectronics," Bull. Mat. Res. Soc. pp. 60-64 (April 1998).
78. T.R. Hebner and J.C. Sturm, "Local tuning of organic light-emitting diode color by dye droplet application," Appl. Phys. Lett. 73, pp. 1775-1777 (1998).
79. (Invited) J.C. Sturm, W. Wilson, and M. Iodice, "Thermal effects and scaling in organic light-emitting flat-panel displays," IEEE J. of Selected Topics in Quantum Electronics 4, pp. 75-82 (1998).
80. C.L. Chang, L.P. Rokhinson, J.C. Sturm, "Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy /p- Si(100) by heterojunction internal photoemission," Appl. Phys. Lett. 73, pp. 3568-3570 (1998).
81. M. Yang, C.L. Chang, M. Carroll, and J.C. Sturm, "25nm p-channel vertical MOSFET's with SiGeC source-drains," IEEE Elec. Dev. Lett. EDL-20, pp. 301-303 (1999).
82. K. Pangal, J.C. Sturm, S. Wagner, and T.H. Büyüklimanli, "Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films," J. Appl. Phys. 85, pp. 1900-1906 (1999).
83. C.W. Liu, M.Y. Chem, C.L. Chang and J.C. Sturm, "Thermal stability of Si/Si1-x-yGexCy/Si quantum wells grown by rapid thermal chemical vapor deposition," J. Appl. Phys. 85, pp. 2124-2128 (1999).
84. F. Pschenitzka and J.C. Sturm, "Three-color organic light-emitting diodes patterned by masked dye diffusion," Appl. Phys. Lett. 74, pp. 1913-1915 (1999).
85. C.L. Chang and J.C. Sturm, "Suppression of boron penetration by polycrystalline Si1-x-yGexCy in metal - oxide - semiconductor structures," Appl. Phys. Lett. 74, pp. 2501-2503 (1999).
86. K. Pangal, J.C. Sturm, and S. Wagner, "Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon," Appl. Phys. Lett. 75, pp. 2091-2093 (1999).
87. M. Wu, K. Pangal, J.C. Sturm, and S. Wagner, "High electron mobility polycrystalline silicon thin-film transistors on steel foil substrates," Appl. Phys. Lett. 75, pp. 2244-2246 (1999).
88. C. Madigan, M.H. Lu, and J.C. Sturm, "Improvement of output coupling efficiency of organic light-emitting diodes by substrate modification," Appl. Phys. Lett. 76, pp. 1650-1652 (2000).
89. M.S. Carroll, J.C. Sturm, and M. Yang, "Low-temperature preparation of oxygen-and carbon-free silicon-germanium surfaces for silicon and silicon-germanium epitaxial growth by rapid thermal chemical vapor deposition," J. Electrochem. Soc. 147, pp. 4652-4659 (2000).
90. X.Z. Jiang, R.A. Register, K.A. Killeen, M.E. Thompson, F. Pschenitzka, and J.C. Sturm, "Statistical copolymers with side-chain hole and electron transport groups for single-layer electroluminescent device applications," Chem. Mater. 12, pp. 2542-2549 (2000).
91. M. Yang, M. Carroll, J.C. Sturm, and T. Buyuklimanli, "Phosphorus doping and sharp profiles in silicon and silicon-germanium epitaxy by rapid thermal chemical vapor deposition," J. Electrochem. Soc. 147, pp. 3541-3545 (2000).
92. K. Pangal, J.C. Sturm, S. Wagner, and N. Yao, "Thin-film transistors in polycrystalline silicon by blanket and local source/drain hydrogen plasma-seeded crystallization," IEEE Trans. Electron Dev. TED-47, pp. 1599-1607 (2000).
93. S. Madhavi, V. Venkataraman, J.C. Sturm, and Y.H. Xie, "Low-and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: effect of phonon confinement in germanium quantum wells," Phys. Rev. B 61, pp. 16807-16818 (2000).
94. K. Pangal, J.C. Sturm, and S. Wagner, "Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer on the same substrate," IEEE Trans. Electron Dev. TED-48, pp. 707-714 (2001).
95. F. Pschenitzka and J.C. Sturm, "Solvent-enhanced dye diffusion in polymer thin films for color tuning of organic light-emitting diodes," Appl. Phys. Lett. 78, pp. 2584-2586 (2001).
96. M.H. Lu, J.C. Sturm "External coupling efficiency in planar organic light-emitting devices," Appl. Phys. Lett. 78, pp. 1927-1929 (2001).
97. M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, and D.J. Tweet, "Diffusion enhanced carbon loss from SiGeC layers due to oxidation," Phys. Rev. B 64, pp. 073308-4 (2001).
98. M.S. Carroll, J.C. Sturm, and T. Buyuklimanli, "Quantitative measurement of the surface silicon interstitial boundary condition and silicon interstitial injection into silicon during oxidation," Phys. Rev. B 64, pp. 085316-7 (2001).
99. N. Darnton, O. Bakajin, R. Huang, B. North, O.J. Tegenfeldt, E.C. Cox, J.C. Sturm, R.H. Austin, "Hydrodynamics in 2-1/2 dimensions: making jets in a plane," J Phys. Condens. Mat. 13, pp. 4891-4902 (2001).
100. Y.A. Vlasov, X.Z. Bo, J.C. Sturm, D.J. Norris, "On-chip natural assembly of silicon photonic bandgap crystals," Nature 414, pp. 289-293 (2001).
101. F. Pschenitzka, and J.C. Sturm. "Excitation mechanisms in dye-doped organic light-emitting devices," Appl. Phys. Lett. 79, pp. 4354-4356 (2001).
102. E. Stewart and J.C. Sturm, "Suppression of boron penetration in p-channel MOSFETs using polycrystalline SiGeC gate layers," IEEE Elec. Dev. Lett. EDL-22, pp. 574-576 (2001).
103. M.H. Lu and J.C. Sturm, "Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment," J. Appl. Phys. 91, pp. 595-604 (2002).
104. H. Yin, R. Huang, K.D. Hobart, Z. Suo, T.S. Kuan, C.K. Inoki, S.R. Shieh, T.S. Duffy, F.J. Kub, J.C. Sturm, "Strain relaxation of SiGe islands on compliant oxide," J. Appl. Phys. 91, pp. 9716-9722 (2002).
105. X. Jiang, R.A. Register, K.A. Killeen, M.E. Thompson, F. Pschenitzka, T.R. Hebner, J.C. Sturm, "Effect of carbazole-oxadiazole excited-state complexes on the efficiency of dye-doped light-emitting diodes," J. Appl. Phys. 91, pp. 6717-6724 (2002).
106. X.Z. Bo, N. Yao, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Large-grain polycrystalline silicon films with low intragranular defect density by low-temperature solid-phase crystallization without underlying oxide," J. Appl. Phys. 91, pp. 2910-2915 (2002).
107. X.Z. Bo, N. Yao, S. Wagner, and J.C. Sturm, "Spatially selective single-grain silicon films induced by hydrogen plasma seeding," J. Vac. Sci. Tech. B 20, pp. 818-821 (2002).
108. J. Liang, R. Huang, H. Yin, J.C. Sturm, K.D. Hobart, and Z. Suo, "Relaxation of compressed elastic islands on a viscous layer," Acta Materialia 50, pp. 2933-2944 (2002).
109. P.I. Hsu, R. Bhattacharya, H. Gleskova, M. Huang, Z. Xi, Z. Suo, S. Wagner, and J.C. Sturm, "Thin-Film Transistor Circuits on Large-Area Spherical Surfaces," Appl. Phys. Lett. 81, pp. 1723-1725 (2002).
110. L.R. Huang, P. Silberzan, J.O. Tegenfeldt, E.C. Cox, J.C. Sturm, R.H. Austin, and H. Craighead, "Role of molecular size in ratchet fractionation," Phys. Rev. Let. 89, pp. 178301 (2002).
111. R.H. Austin, N. Darnton, R. Huang, J.C. Sturm, O. Bakajin, and T. Duke, "Ratchets: the problem with boundary conditions in insulating fluids," Appl. Phys. A 75, pp. 279-284 (2002).
112. L.R. Huang, J.O. Tegenfeldt, J.J. Kraeft, J.C. Sturm, R. H. Austin, and E. C. Cox, "A DNA prism for high-speed continuous fractionation of large DNA molecules," Nature Biotechnology, 20, pp. 1048-1051 (2002).
113. X.Z. Bo, L.P. Rokhinson, H. Yin, D.C. Tsui, and J.C. Sturm, "Nanopatterning of Si/SiGe electrical devices by atomic force microscopy oxidation," Appl. Phys. Lett. 81, pp. 3263-3265 (2002).
114. M. Wu, X.Z. Bo, J.C. Sturm, S. Wagner, "Complementary metal-oxide-semiconductor thin-film transistor circuits from a high-temperature polycrystalline silicon process on steel foil substrates," IEEE Trans. Elec. Dev. TED-49, pp. 1993-2000 (2002).
115. C.Prinz, J.O. Tegenfeldt, R.H. Austin, E.C. Cox, J.C. Sturm, "Bacterial chromosome extraction and isolation," Lab Chip, 2, pp. 207-212 (2002).
116. M.S. Carroll and J.C. Sturm, "The quantification of substitutional carbon loss from Si0.998 C0.002 due to silicon self-interstitial injection during oxidation," Appl. Phys. Lett. 81, pp. 1225-1227 (2002).
117. P.I. Hsu, H. Gleskova, M. Huang, Z. Suo, S. Wagner, and J.C. Sturm, "Amorphous Si TFTs on plastically-deformed spherical domes," 19th Int. Conf. On Amorphous & Microcrystalline Semiconductors, J. Non-Crystalline Solids. 299-302 pp. 1355-1359 (2002).
118. D. De Salvador, A. Coati, E. Napolitani, M. Berti, A.V.Drigo, M.S. Carroll, J.C. Sturm, J. Stangl, G. Bauer, L. Lazzarini. "Carbon precipitation and diffusion in SiGeC alloys under silicon self-interstitial injection," Appl. Phys. A 75, pp. 667-672 (2002).
119. E. Napolitani, D. De Salvador, A. Coati, M. Berti, A.V. Drigo, M.S. Carroll, J.C. Sturm, J. Stangl, G. Bauer, C. Spinella. "Diffusion and clustering of supersaturated carbon in SiGeC layers under oxidation," Nuclear Instruments and Methods in Physics Research B 186, pp. 212-217 (2002).
120. X.Z. Bo, N. Yao, S. Wagner, J.C. Sturm, "Spatially selective single-grain silicon films induced by hydrogen plasma seeding," J. Vac. Sci. Tech. B 20, pp. 818-821 (2002).
121. S. Wagner, E. Bonderover, W. Jordan, J.C. Sturm, "Electrotextiles: Concepts and challenges," Int. J. of High Speed Electronics and Systems. 12, pp. 391-399 (2002).
122. H. Yin, K.D. Hobart, F.J. Kub, S.R. Shieh, T.S. Duffy, J.C. Sturm, "Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates," Appl. Phys. Lett. 82, pp. 3853-3855 (2003).
123. H. Yin, R. Huang, K.D. Hobart, J. Liang, Z. Suo, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm, "Buckling suppression of SiGe islands on compliant substrates," J. App. Phys. 94, pp. 6875 (2003).
124. L.R. Huang; E.C. Cox, R.H. Austin, J.C. Sturm, "Tilted Brownian Ratchet for DNA Analysis," Anal. Chem. 75, pp. 6963-6967 (2003).
125. W.L. Li, J.O. Tegenfeldt L. Chen, R.H. Austin, S.Y. Chou, P.A. Kohl, J. Krotine, J.C. Sturm, "Sacrificial polymers for nanofluidic channels in biological applications," Nanotechnology 14, pp. 578-583 (2003).
126. H. Gleskova, P.-I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, S. Wagner, "Field-effect mobility of amorphous silicon thin-film transistors under strain," Non-Crystalline Solids 338, pp. 732-735 (2004).
127. L.R. Huang, E.C. Cox, R.H. Austin, J.C. Sturm, "Continuous particle separation through deterministic lateral displacement," Science 304, pp. 987-990 (2004).
128. H. Yin, K.D. Hobart, F.J. Kub, S.R. Shieh, T.S. Duffy, J.C. Sturm, "High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation," Appl. Phys. Lett. 84, pp. 3624-3626 (2004).
129. E.J. Stewart, M.S. Carrol, J.C. Sturm, "Boron segregation and electrical properties in polycrystalline Si1-x-yGexCy and Si1-yCy alloys," J. Appl. Phys. 95, pp. 4029-4035 (2004).
130. O. Tegenfeldt, H. Cao, W. W. Reisner, C. Prinz, R. H. Austin, S. Y. Chou, E.C. Cox, and J.C. Sturm, "Stretching DNA in nanochannels," Biophys. J. 86, pp. 596A-596A (2004).
131. J.O. Tegenfeldt, C. Prinz, H. Cao, R.L. Huang, R.H. Austin, S.Y. Chou E.C. Cox, J.C. Sturm, "Micro- and nanofluidics for DNA analysis," Analytical and Bioanalyical Chem. 378, pp. 1678-1692 (2004).
132. P.-I. Hsu, M. Huang, H. Gleskova, Z. Xi, Z. Suo, S. Wagner and J.C. Sturm, "Effects of mechanical strain on TFTs on spherical domes," IEEE Trans. Elec. Dev. TED-51, pp.371-377 (2004).
133. E.J. Stewart, J.C. Sturm, "Segregation of boron to polycrystalline and single-crystal Si-1-(x)-yGexCy and Si1-yCy layers," App. Surface Science 224, pp.87-90 (2004).
134. P.-I. Hsu, M. Huang, Z. Xi, S. Wagner, Z. Suo, J.C. Sturm, "Spherical deformation of compliant substrates with semiconductor device islands," J. Appl. Phys. 95, pp.705-712 (2004).
135. J. Tegenfeldt, C. Prinz, H. Cao, S. Chou, W. Reisner, R. Riehn, Y.M. Wang, E. Cox, J.C. Sturm, P. Silberzan, R.H. Austin, "The dynamics of genomic-length DNA molecules in nm channels," Proc. Nat. Acad. Sci. 101, pp. 10979-10983, (2004).
136. S. Wagner, S.P. Lacour, J. Jones, P.-I. Hsu, J.C. Sturm, T. Li, Z. Suo, "Electronic Skin: architecture and components," Physica E 25, pp. 326-344, (2004).
137. T. Graves-Abe, F. Pschenitzka, H. Z. Jin, B. Bollman, J. C. Sturm and R. A. Register, "Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application," J. Appl. Phys. 95, pp. 7154-7163 (2004).
138. T. Graves-Abe, Z. Bao, and J.C. Sturm, "Self-aligned, insulating-layer structure for integrated fabrication of organic self-assembled multilayer electronic devices," Nano Letters 4, pp. 2489-2492 (2004).
139. D.W. Inglis, R. Riehn, R.H. Austin, J.C. Sturm, "Continuous Microfluidic Immunomagnetic Cell Separation," Appl. Phys. Lett. 85, pp. 593-595 (2004).
140. H. Yin, K.D. Hobart, R.L. Peterson, F.J. Kub, J.C. Sturm, "Ultrathin Strained-SOI by Stress Balance on Compliant Substrates and FET Performance," IEEE Trans. Elec. Dev. TED-52, pp.  2207-2214, (2005).
141. H. Yin, R.L. Peterson, K.D. Hobart, S.R. Shieh, T.S. Duffy, J.C. Sturm, "Tunable uniaxial vs. biaxial in-plane strain using compliant substrates," Appl. Phys. Lett. 87, pp. 061922 - 3 (2005).
142. T. Graves-Abe and J. C. Sturm, "Programmable organic thin-film devices with extremely high current densities," Appl. Phys. Lett. 87, pp. 133502-3 (2005).
143. I.-C. Cheng, A. Kattamis, K. Long, J.C. Sturm, and S. Wagner, "Stress control for overlay registration in a-Si:H TFTs on flexible organic-polymer-foil substrates," J. Soc. Inf. Display 13, pp. 563 (2005).
144. Y.M. Wang, J.O. Tegenfeldt, J.C. Sturm, R.H. Austin “Long-range interactions between transcription factors” Nanotechnology 16, pp. 1993-1999 (2005).
145. Y.M. Wang , J.O. Tegenfeldt, W. Reisner, R. Riehn, X.J. Guan , L.I. Guo, I. Golding, E.C. Cox , J.C. Sturm, R.H. Austin, “Single-molecule studies of repressor-DNA interactions show long-range interactions” Proc. Nat. Acad. Sci. USA 28, pp. 9796-9801 (2005).
146. E.J. Stewart, M.S. Carroll, J.C. Sturm, “Boron segregation in single-crystal Si1-x-yGexCy and Si1-yCy alloys,” J. Electrochem. Soc. 152, pp. 500-505 (2005).
147. W. Reisner, K.J. Morton, R. Riehn, Y.M. Wang, Z.N. Yu, M. Rosen, J.C. Sturm, S.Y. Chou, E. Frey, R.H. Austin, “Statics and dynamics of single DNA molecules confined in nanochannels,” Phys. Rev. Lett. 94, pp. 196101 (2005).
148. D.W. Inglis, J.A. Davis, R.H. Austin, J.C. Sturm, "Critical particle size for fractionation by deterministic lateral displacement," Lab Chip 6, pp. 655-658 (2006).
149. I.C. Cheng, A.Z. Kattamis, K. Long, J.C. Sturm, S. Wagner, "Self-aligned amorphous-silicon TFTs on clear plastic substrates," IEEE Elec. Dev. Lett. EDL-27, pp. 166-168 (2006).
150. K. Long, A.Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner. J.C. Sturm, "Stability of amorphous-silicon TFTs deposited on clear plastic substrates at 250 degrees C to 280 degrees C," IEEE Elec. Dev. Lett. EDL-27, pp. 111-113 (2006).
151. A.Z. Kattamis, R.J. Holmes, I.-C. Cheng, K. Long, J.C. Sturm, S.R. Forrest, S. Wagner, "High mobility nanocrystalline silicon transistors on clear plastic substrates," IEEE Elec. Dev. Lett. EDL-27, pp. 49-51 (2006).
152. R. L. Peterson, K. D. Hobart, H. Yin, F. J. Kub, and J.C. Sturm, "Maximizing uniaxial tensile strain in large-area silicon-on-insulator islands on compliant substrates," J. Appl. Phys. 100, pp. 023537 (2006).
153. R.L. Peterson, K.D. Hobart, H. Yin, F.J. Kub, and J.C. Sturm, "Reduced Buckling in one dimension versus two dimensions of a compressively strained film on a compliant substrate," J. Appl. Phys. 88, pp. 021913 (2006).
154. R.L. Peterson, K.D. Hobart, F.J. Kub, and J.C. Sturm, "Comment on Fabrication of strained silicon on insulator by strain transfer process", Appl. Phys. Lett. 88, pp. 146101 (2006).
155. K. Long, A.Z. Kattamis, I.-C. Cheng, H. Gleskova, S. Wagner, J.C. Sturm, M. Stevenson, G. Yu, and M. O’Regan, “Active Matrix Amorphous-Silicon TFT Arrays at 180 oC on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays,” IEEE Trans. Elec. Dev. TED-53, pp. 1789-1796, (2006).
156. X.-Z. Bo, L.P. Rokhinson, N. Yao, D.C. Tsui and J.C. Sturm, "SiGe quantum dot single-hole transistor fabricated by atomic force microscope nanolithography and silicon epitaxial-regrowth," J. of Appl. Phys. 100, pp. 094317 (2006).
157. J.A. Davis, D.W. Inglis, K.J. Morton, D.A. Lawrence, L.R. Huang, S. Y. Chou, J.C. Sturm, and R.H. Austin, "Deterministic hydrodynamics:  Taking blood apart," Proc. Nat. Acad. Sci. 103, pp. 14779 - 14784, (2006).
158. R. Riehn, R.H. Austin, and J.C. Sturm, "A Nanofluidic Railroad Switch for DNA," Nano Letters 6, pp. 1973-1976 (2006).
159. K. Long, F. Pschenitzka, M.-H. Lu, and J.C. Sturm, “Full-Color OLEDs Integrated by Dry Dye Printing,” IEEE Trans. Elec. Dev. TED-53, pp. 2250-2258 (2006).
160. H. Gleskova, I-C. Cheng, S. Wagner, J.C. Sturm, Z.Suo,“Mechanics of thin-film electronics on flexible substrates,” Solar Energy 80, pp. 687-693 (2006).
161. J.C. Sturm, P.-I. Hsu, H. Gleskova, R. Bhattacharya, and S. Wagner, “Deformable Electronic Surfaces,” International Journal of High Speed Electronics and Systems 16, pp. 365-374 (2006).
162. O. Bakajin, E. Fountain, K. Morton, S.Y. Chou, J.C. Sturm, R.H. Austin, "Materials aspects in micro-and nanofluidic systems applied to biology," MRS Bulletin 31, pp. 108-113 (2006).
163. K.H. Chung, J.C. Sturm, E. Sanchez, K.K. Singh, S. Kuppurao, "The high growth rate of epitaxial silicon-carbon alloys by using chemical vapour deposition and neoplentasilane," Semiconductor Science and Technology 22, pp. 158-516 (2007).
164. W. Zheng, J.C. Sturm, C.F. Gmachl, T. Buyuklimanli, J. Marino, M.S. Denker, J.T. Mayer, "The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications," Semiconductor Science and Technology 22, pp. 188-190 (2007).
165. K. Long, I.C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J.C. Sturm, "Amorphous-silicon thin-film transistors made at 280 degrees C on clear-plastic substrates by interfacial stress engineering," J. Soc. Info. Display 15, pp 167-176 (2007).
166. A.Z. Kattamis, I.-C. Cheng, K. Long, B. Hekmatshoar, K.H. Cherenack, S. Wagner, J.C. Sturm, S.M. Venugopal, D.E. Loy, S.M. O'Rourke, and D.R. Allee, "Amorphous Silicon Thin-Film Transistor Backplanes Depositied at 200C on Clear Plastic for Lamination to Electrophoretic Displays," J. Display Technology 3, pp. 304-309, (2007).
167. K.H. Cherenack, A.Z. Kattamis, B.Hekmatshoar, J.C. Sturm, and S. Wagner, "Amorphous-Silicon Thin-Film Transistors Fabricated at 300C on a Free-Standing Foil Substrate of Clear Plastic," IEEE Elec. Dev. Lett. EDL-28, pp. 1004-1006 (2007).
168. D.W. Inglis, J.A. Davis, T.J. Zieziulewicz, D.A. Lawrence, R.H. Austin, J.C. Sturm, "Determining blood cell size using microfluidic hydrodynamics," J. Immuno. Methods 329, pp. 151-156 (2008).
169. B. Hekmatshoar, A.Z. Kattamis, K.H. Cherenack, S. Wagner, and J.C. Sturm, "A novel TFT-OLED integration for OLED-independent pixel programming in amorphous-Si AMOLED pixels", J. Soc. Inf. Display 16, pp. 183-188, (2008).
170. B. Hekmatshoar, A.Z. Kattamis, K.H. Cheranack, K. Long, J.Z. Chen, S. wagner, J.C. Sturm, K. Raman, M. Hack, "Reliability of Active-Matrix Organic Light-Emitting-Diode Arrays With Amorphous Silicon Thin-Film Transistor Backplanes on Clear Plastic," IEEE Elec. Dev. Lett. EDL- 29, pp. 63-66 (2008).
171. D.W. Inglis, K.J. Morton, J.A. Davis, T.J. Zieziulewicz, D.A. Lawrence, R.H. Austin and J.C. Sturm, "Microfluidic device for label-free measurement of platelet activation," Lab Chip 8, pp. 925-931 (2008).
172. K.J. Morton, K. Loutherback, D.W. Inglis, O.K. Tsui, J.C. Sturm, S.Y. Chou, and R.H. Austin, "Hydrodynamic metamaterials:  Microfabricated arrays to steer, refract, and focus streams of biomaterials," Proc. Nat. Acad. Sci. 105, pp. 7434-7438 (2008).
173. K.H. Chung, N. Yao, J. Benziger, J.C. Sturm, K.K. Singh, D. Carlson, and S. Kuppurao, "Ultrahigh growth rate of epitaxial silicon by chemical vapor deposition at low temperature with neopentasilane," Appl. Phys. Lett. 92, pp. 113506-3 (2008).
174. B. Hekmatshoar, K.H. Cherenack, A.Z. Kattamis, K. Long, S. Wagner, J.C. Sturm, "Highly stable amorphous-silicon thin-film transistors on clear plastic," Appl. Phys. Lett. 93, pp. 032103-3 (2008).
175. Y.F. Huang, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Top-gate amorphous silicon TFT with self-aligned silicide source/drain and high mobility," IEEE Elec. Dev. Lett. EDL-29, pp. 737-739 (2008).
176. K.J. Morton, K. Loutherback, D.W. Inglis, O.K. Tsui, J.C. Sturm, S. Y. Chou and R. H. Austin, "Crossing Microfluidic Streamlines to Lyse, Label and Wash Cells" Lab Chip 8, pp. 1448-1453 (2008).

177. B. Hekmatshoar, K. Cherenack, S. Wagner and J. C. Sturm, "Amorphous Silicon Thin-Film Transistors with DC Saturation Current Half-Life of More than 100 Years", Technical Digest - 2008 IEEE (IEDM 2008), pp. 89-92 (2008).

178. K.H. Cherenack, A.Z. Kattamis, B. Hekmatshoar, J.C. Sturm, S. Wagner, "Amorphous Silicon Thin-Film Transistors made on Clear Plastic at 300 °C," J. Korean Phys. Soc. 54, pp. 415-420 (2009).
179. K. Loutherback, J. Puchalla, R.H. Austin, J.C. Sturm, "Deterministic Microfluidic Ratchet," Phys. Rev. Lett. 102, pp. 045301-4 (2009).
180. B. Hekmatshoar, S. Wagner and J.C. Sturm, "Tradeoff regimes of lifetime in amorphous silicon thin-film transistors and a universal lifetime comparison framework," Appl. Phys. Lett. 95, pp. 143504-3 (2009).
181. H. Jin and J.C. Sturm, "Super-high-resolution transfer printing for full-color OLED display patterning," J. Soc. Information Display, pp. 141-145 (2010).
182. E. Lausecker, Y. Huang, T. Fromherz, J.C. Sturm, S. Wagner, "Self-aligned imprint lithography for top-gate amorphous silicon thin-film transistor fabrication," Appl. Phys. Lett. 96, pp. 263501-3 (2010).
183. S. Avasthi, Y. Qi, G.K. Vertelov, J. Schwartz, A. Kahn, J.C. Sturm, "Silicon surface passivation by an organic overlayer of 9, 10-phenanthrenequinone," Appl. Phys. Lett. 96, pp. 222109-3 (2010).
184. L, Liu, K. Loutherback, D. Liao, D. Yeater, G. Lambert, G. Estevez-Torres, J.C. Sturm, R.H. Getzenberg, R.H. Austin, "A microfluidic device for continuous cancer cell culture and passage with hydrodynamic forces," Lab Chip 10, pp. 1807-1813 (2010).
185. K. Morton, O.K. Tsui, C.K. Tung, J.C. Sturm, S.Y. Chou, R. Austin, "The anti-louts leaf effect in nanohydrodynamic bump arrays," New J. Phys. 12, pp. 085008-14 (2010).
     
186. K. Loutherback, K.S. Chou, J. Newman, J. Puchalla, R.H. Austin, and J.C. Sturm, "Improved Performance of Deterministic Lateral Displacement Arrays with Triangular Posts," Microfluidics and Nanofluidics 9, pp. 1143-1149 (2010).
187. K.H. Cherenack, B. Hekmatshoar, J.C. Sturm, and S. Wagner, "Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 C," IEEE Trans. Elec. Dev. TED-57, pp. 2381-2389 (2010).
188. Y. Huang, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Static active-matrix OLED display without pixel refresh enabled by amorphous-silicon non-volatile memory," J. Soc. Info. Display 18, pp. 879-883 (2010).
189. L. Han, Y.F. Huang, J.C. Sturm, and S. Wagner, "Self-Aligned Top-Gate Coplanar a-Si:H Thin-Film Transistors With a SiO2-Silicone Hybrid Gate Dielectric," IEEE Elect. Dev. Lett. EDL-32, pp. 36-38 JAN (2011).
190. S. Avasthi, Y.B. Qi, G.K. Vertelov, J. Schwartz, A. Kahn, J.C. Sturm, "Electronic structure and band alignment of 9, 10-phenanthrenequinone passivated silicon surfaces," Surface Science 605, pp. 1308-1312 JUL (2011).
191. Y. Huang, S. Wagner, J.C. Sturm, "Nonvolatile Amorphous-Silicon Thin-Film Transistor Structure for Drain-Voltage Independent Saturation Current," IEEE Trans. Elec. Dev. TED-58, pp. 2924-2927 (2011).
192. N.T. Jafferis, H.A. Stone, J.C. Sturm, "Traveling wave-induced aerodynamic propulsive forces using piezoelectrically deformed substrates," Appl. Phys. Lett. 99, 114102-3 (2011).
193. S. Avasthi, S. Lee, Y.-L. Loo, J.C. Sturm, "Role of Majority and Minority Carrier Barriers Silicon/Organic Hybrid Heterojunction Solar Cells," Advanced Materials 23, pp. 5762-5766 (2011)
194. N. Jafferis, J.C. Sturm, "Formation and post-deposition compression of smooth and processable silicon thin films from nanoparticle suspensions," J. Appl. Phys. 111, 064316 (2012).
195. C. Payette, K. Wang, P.J. Koppinen, Y. Dovzhenko, J.C. Sturm, J.R. Petta, "Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures," Appl. Phys. Lett. 100, 043508-1-3 (2012)
196. J.-Y. Li, C.-T. Huang, J.C. Sturm, "The effect of hydrogen on the surface segregation of phosphorus in epitaxially grown relaxed Si0.7Ge0.3 films by rapid thermal chemical vapor deposition," Appl. Phys. Lett. 101, 142112 (2012).
197. K. Loutherback, J. D'Silva, L. Liu, A. Wu, R.H. Austin, and J.C. Sturm, "Deterministic separation of cancer cells from blood at 10 mL/min," AIP Advances 2, 042107-1-7 (2012).
198. C.-T. Huang, J.-Y. Li and J.C. Sturm, "Implant Isolation of Silicon Two-Dimensional Electron Gases at 4.2 K", IEEE Elec. Dev. Lett. EDL-34, pp. 21-23 (JAN 2013).
199. L.-Y. Liu, G. Duclos, B. Sun, J. Lee, A. Wu, Y. Kam, E.D. Sontag, H.A. Stone, J.C. Sturm, R.A. Gatenby and R.H. Austin, "Minimization of thermodynamic costs in cancer cell invasion", PNAS, 110 (5), pp. 1686-1691 (JAN 2013).
200. N.T. Jafferis and J.C. Sturm, "Fundamental and Experimental Conditions for the Realization of Traveling-Wave-Induced Aerodynamic Propulsive Forces by Piezoelectrically Deformed Plastic Substrates", J. of Microelectromech. Syst. 22, (2), pp. 495-505 (APR 2013).
201. S. Avasthi, W. McClain, G. Man, A. Kahn, J. Schwartz, and J.C. Sturm, "Hole-blocking titanium-oxide/silicon heterojunction and its application to photovoltaics", App. Phys. Lett. 102, 203090 (2013) http://dx.doi.org/10.1063/1.4803446.
202. J.-Y. Li, and J.C. Sturm, "The Effect of Germanium Fraction on High-Field Band-to-Band Tunneling in p+-SiGe/n+-SiGe Junctions in Forward and Reverse Biases", IEEE T-ED 60, pp. 2479-2484 (2013) doi 10.1109/TED/2013.2267172.
     

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[Journal Articles] [Conference Papers] [Volumes Edited, Contributed Chapters]

Conference Papers:

1. T.J. Stultz, J.C. Sturm, and J.F. Gibbons, "Beam processing of silicon with a scanning cw Hg lamp," Mat. Res. Soc. Symp. Proc. 13, pp. 463-476 (North Holland, New York, 1983).
2. J.F. Gibbons, M.D. Giles, J.C. Sturm, and J.T. Walker, "Circuit simulation of three-dimensional devices in beam-recrystallized polysilicon films," Proc. Inter. Conf. on Solid-State Devices and Materials, Tokyo, Japan, (Aug. 1983).
3. J.C. Sturm and J.F. Gibbons, "A three-dimensional merged vertical bipolar-MOS device in recrystallized silicon," Tech. Prog. Device Res. Conf. (1985)., also in IEEE Trans. Elec. Dev. TED-32, pp. 2548 (1985).
4. J.C. Sturm and J.F. Gibbons, "Vertical bipolar transistors and a merged 3-D vertical bipolar-MOS device in recrystallized polysilicon," Mat. Rec. Soc. Symp. Proc. 53, pp. 395-400 (North-Holland, New York, 1986).
5. C.M. Gronet, J.C. Sturm, K.E. Williams, and J.F. Gibbons, "Limited reaction processing of silicon: oxidation and epitaxy," Mat. Res. Soc. Symp. Proc. 52, pp. 305-312 (North-Holland, 1986).
6. C.H. Ting, W. Baerg, H.Y. Lin, B. Siu, T. Hwa, J.C. Sturm, and J.F. Gibbons, "A seeded-channel approach to silicon-on-insulator technology," Mat. Res. Soc. Symp. Proc. 53, pp. 77-82 (North-Holland, New York, 1986).
7. J.C. Sturm, C.M. Gronet, and J.F. Gibbons, "Limited reaction processing: situ epitaxial silicon-thin oxide-doped polysilicon layers for MOS transistors," Tech. Prog. Device Res. Conf., (1987)., also in IEEE Trans. Elec. Dev. TED-33, pp. 1847-1848 (1986).
8. J.F. Gibbons, C.M. Gronet, J.C. Sturm, et al., "Limited Reaction Processing," Mat. Res. Soc. Symp. Proc. 74, pp. 629-639 (Pittsburgh, 1987).
9. (Invited) J.C. Sturm, "Performance advantages of silicon-on-insulator for VLSI," Mat. Res. Soc. Symp. Proc. 107, pp. 295-308 (Pittsburgh, 1988).
10. J.C. Sturm, K. Tokunaga, and J.P. Colinge, "Transconductance enhancement mechanisms in ultra-thin (<1000 Å) silicon-on-insulator MOSFET's," (abs.), Tech. Prog. Device Research Conf, 1988, also in IEEE Trans. Electron Dev. TED-35, pp. 2431-2432 (1988).
11. J.C. Sturm, "Limited reaction processing and the growth of in-situ multi-layer structures," Ext. Abs. Electrochem. Soc. B88-1, pp. 102 (1988).
12. (Invited) J.C. Sturm, "Increased transconductance in fully-depleted ultra-thin silicon-on-insulator MOSFET's," Proc. Of the 7th Future Electron Device Symposium, Tokyo, (November 1988).
13. J.C. Sturm, X. Xiao, P.M. Garone, and P.V. Schwartz, "Electron-beam-induced-current (EBIC) imaging of defects in Si1-xGex multilayer structures," Mat. Res. Soc. Symp. Proc. 148, pp. 341 (1989).
14. P.M. Garone, P.V. Schwartz, and J.C. Sturm, "Growth rate and doping kinetics in silicon-germanium films grown by Limited Reaction Processing," Mat. Res. Soc. Symp. Proc. 146, pp. 41 (1989).
15. J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Oxygen incorporation in low temperature (625-800oC) silicon and silicon-germanium epitaxial layers grown by vapor-phase techniques in a non-UHV system," Tech. Prog. Elec. Mat. Conf 64 (1989).
16. K. Tokunaga, J.C. Sturm, and J.P. Colinge, "Substrate bias and temperature dependence of anomalous subthreshold slopes in fully-depleted submicron SOI MOSFET's," Proc. IEEE SOS/SOI Tech. Conf., pp. 15-16 (1989).
17. C.K. Celler, J.C. Sturm, et al., "6.2 Ghz digital CMOS circuits in thin SIMOX films," Proc. IEEE SOS/SOI Tech. Conf., pp. 139-140 (1989).
18. E.J. Prinz, P.M. Garone, P.V. Schwartz, X. Xiao, and J.C. Sturm, "The effect of base-emitter spacers and strain-dependent densities of states in Si/Si1-xGex/Si heterojunction bipolar transistors," Inter. Electron Devices Mtg. Tech. Dig., pp. 639-642 (1989).
19. A. Kamgar, J.C. Sturm et al, "Ultra-high speed CMOS circuits on thin SIMOX films," Inter. Electron Devices Mtg. Tech. Dig. pp. 829-832 (1989).
20. P.V. Schwartz, J.C. Sturm, and P.M. Garone, "Extreme supersaturation of oxygen in low temperature epitaxial silicon and silicon-germanium alloys," Mat. Res. Soc. Symp. Proc. 163, pp. 591-596 (1989).
21. J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Temperature measurement by infrared transmission for rapid thermal processing applications," Mat. Res. Soc. Symp. Proc. 157, pp. 401-406 (1989).
22. J.C. Sturm, P.V. Schwartz, and P.M. Garone, "In-situ temperature measurement by infrared absorption for low-temperature epitaxial growth of homo- and hetero-epitaxial layers on silicon," Journal Electronic Materials 19, pp. 1051-1054 (1990).
23. J.C. Sturm, P.V. Schwartz, and P.M. Garone, "Non-invasive silicon temperature measurement by infrared transmission for rapid thermal processing applications," Proc. Symp. on VLSI Tech. 10, pp. 107-119 (1990).
24. P.V. Schwartz, J.C. Sturm, and C.W. Magee, "Reduction of oxygen incorporation and lifetime measurements in epitaxial Si1-x Gex films grown by low temperature rapid thermal CVD," Tech. Prog. Elec. Mat. Conf. 19, pp. 19-20 (1990).
25. J.C. Sturm and C.M. Reaves, "Fundamental mechanisms and doping effects in silicon infrared absorption for temperature measurement by infrared transmission," Proc. SPIE Conf. on Rapid Thermal Processing, 1393, pp. 309-315 (1990).
26. J.C. Sturm, P.V. Schwartz, E.J. Prinz, and C. Magee, "Control of oxygen incorporation and lifetime measurement in Si1-xGex epitaxial films grown by rapid thermal chemical vapor deposition," Proc. SPIE Conf. on Rapid Thermal Processing, 1393, pp. 252-259 (1990).
27. (Invited) J.C. Sturm, H. Manoharan, V. Venkataraman, P.V. Schwartz, and P.M Garone, "Control of individual layer growth temperatures by rapid temperature switching in Si1-xGx multilayer structures grown by rapid thermal chemical vapor deposition," Proc. Inter. Conf. on Elec. Mat. pp. 457-464 (1990).
28. (Invited) J.C. Sturm, P.M. Garone, E.J. Prinz, P.V. Schwartz, and V. Venkataraman, "Interface abruptness in epitaxial silicon and silicon-germanium structures grown by rapid thermal chemical vapor deposition," Proc. of the Eleventh Inter. Conf. on Chemical Vapor Deposition, pp. 295-306 (1990).
29. X. Xiao, J.C. Sturm, P.V. Schwartz, and K.K. Goel, "Vertical 1.3*m optical modulator in silicon-on-insulator," Proc. IEEE SOS/SOI Tech. Conf., pp. 171-172 (1990).
30. (Invited) J.C. Sturm, E.J. Prinz, P.V. Schwartz, P.M. Garone, and Z. Matutinovic, "Growth and transistor applications of Si1-xGex structures by rapid thermal chemical vapor deposition," Proc. First Topical Symp. on Silicon-Based Heterostructures, Amer. Vac. Soc., pp. 5-10 (1990).
31. E.J. Prinz and J.C. Sturm, "Base transport in near-ideal graded-base Si/Si1-xGex/Si heterojunction bipolar transistors from 150K to 370K," Inter. Electron Devices Mtg. Tech. Dig. pp. 975-978 (1990).
32. P.M. Garone, V. Venkataraman, and J.C. Sturm, "Carrier confinement in MOS-Gated SiGe/Si quantum well structures," Inter. Electron Devices Mtg. Tech. Dig. pp. 383-386 (1990).
33. J.C. Sturm, P. Prucnal, Y.-M. Liu, H. Manoharan, Q. Mi, P.V. Schwartz, and X. Xiao, "Application of Si1-xGex strained layer alloys for silicon-based optical interconnects," Proc. IEEE Sarnoff Symp. (1991).
34. J.C. Sturm, Q. Mi, P.V. Schwartz, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, J.P. Noel, N. Rowell, and D.C. Houghton, "Band-edge exciton photoluminescence in strained silicon-germanium alloy films grown by rapid thermal chemical vapor deposition," Tech. Prog. Electronic Materials Conf., 58, pp. A37-A38 (1991).
35. X. Xiao, K.K. Goel, J.C. Sturm, and P.V. Schwartz, "Data transmission at 1.3*m using a silicon spatial light modulator," Proc. Symp. SPIE on Optical Technology for Microwave Applications, 1476, pp. 301-304, (1991).
36. Z. Matutinovic-Krstelj, E.J. Prinz, P.V. Schwartz, and J.C. Sturm, "Reduction of p+-n+ junction tunneling current for base current improvement in Si/SiGe/Si heterojunction bipolar transistors," Mat. Res. Soc. Symp. Proc. 220, pp. 445-450 (1991).
37. V. Venkataraman and J.C. Sturm, "Single and double two-dimensional hole gases at Si/SiGe heterojunctions grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 220, pp. 391-396 (1991).
38. J.C. Sturm, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thewalt, N.L. Rowell, J.-P. Noel, and D.C. Houghton, "Well-resolved band-edge photoluminescence from strained Si1-xGex layers grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 220, pp. 341-345 (1991).
39. C.W. Liu, J.C. Sturm, P.V. Schwartz, and E.A. Fitzgerald, "Misfit dislocation nucleation mechanisms and metastability enhancement of selective Si1-xGex grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 238, pp. 85-90 (1991).
40. J.C. Sturm, Q. Mi, X. Xiao, and P.V. Schwartz, "Well-resolved band-edge photo- and electro-luminescence in strained Si1-xGx quantum wells and superlattices," Proc. Int. Conf. on Solid State Devices and Materials, pp. 150-152 (1991).
41. J.C. Sturm, P.M. Garone, and V. Venkataraman, "High hole mobility p-channel MOSFET's using MOS-gated Si/Si1-x Gex heterostructures," Proc. Int. Conf. on Solid State Devices and Materials, pp. 261-263 (1991).
42. (Invited) J.C. Sturm, "Strained Si1-x Gex alloys for silicon-based heterojunction bipolar transistors," Tech. Dig. Government Microelectronics Applications Conf. 17, pp. 81-84 (1991).
43. (Invited) J.C. Sturm, X. Xiao, Q. Mi, and H. Manoharan, "Optical properties of Si1-xGex quantum wells and superlattices grown by rapid thermal chemical vapor deposition," Proc. Symp. SPIE on Rapid Thermal and Integrated Processing 1595, pp. 90-98, (1991).
44. E.J. Prinz and J.C. Sturm, "Current-gain early-voltage products in graded-base Si/Si1-xGex/Si heterojunction bipolar transistors," (abs.), Tech. Prog. Dev. Res. Conf., pp. 38-39 (1991), and also in IEEE Trans. Elec. Dev. TED-38, pp. 2695-2696 (1991).
45. J.C. Sturm and C.M. Reaves, "Physical modeling of non-invasive silicon temperature measurement by infrared absorption," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 895-898 (1991).
46. E.J. Prinz and J.C. Sturm, "Analytical modeling and current gain-early voltage products in Si/Si1-xGex/Si heterojunction bipolar transistors," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 853-856 (1991).
47. P.M. Garone and J.C. Sturm, "Mobility enhancement and quantum mechanical modeling in Si1-xGex channel MOSFET's from 90 to 300K," 1991 Inter. Electron Devices Mtg. Tech. Dig. pp. 29-32 (1991).
48. J.C. Sturm, P.V. Schwartz, H. Manoharan, X. Xiao, and Q. Mi, "High lifetime strained Si1-xGex films grown by rapid thermal chemical vapor deposition," Sensors and Actuators 33, pp. 29-32 (1992).
49. (Invited) J.C. Sturm, X. Xiao, P.V. Schwartz, and C.W. Liu, "Band-edge exciton luminescence from Si/strained Si1-xGex/Si structures," J. Vac. Sci. Tech. B 10, pp. 1998-2001 (1992).
50. E.J. Prinz, X. Xiao, P.V. Schwartz, and J.C. Sturm, "A novel double-base heterojunction bipolar transistor for low-temperature bipolar logic," (abs.), Tech. Prog. Dev. Res. Conf., IIA-2 (1992), and also IEEE Trans. Elect. Dev. TED-39, pp. 2636 (1992).
51. Q. Mi, X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Room-temperature 1.3*m and 1.5*m electroluminescence from Si/Si1-xGe1-x quantum wells," (abs.), Tech. Prog. Dev. Res. Conf., VIB-7 (1992), and also IEEE Trans. Elect. Dev. TED-39, pp. 2678 (1992).
52. P.V. Schwartz, C.W. Liu, J.C. Sturm, T. Gong, and P.M. Fauchet, "Current transport properties of semi-insulating oxygen-doped films for use in high-speed photoconductive switches," Tech. Prog. Elec. Mat. Conf., pp. 49 (1992).
53. X. Xiao, J.C. Sturm, L.C. Lenchyshyn, and M.L.W. Thewalt, "Direct evidence by photoluminescence of type-I band alignment for strained Si1-xGex (x\(<= 0.35) on (100) silicon," Tech. Prog. Elec. Mat. Conf. pp. 22-23 (1992).
54. X. Xiao, J.C. Sturm, S.R. Parihar, S.A. Lyon, D. Meyerhofer, and S. Palfrey, "Silicide/Si1-xGex schottky-barrier long-wavelength infrared detectors," Tech. Dig. Int. Elec. Dev. Mtg., pp. 125 (1992).
55. P.V. Schwartz, J.C. Sturm, and C.W. Liu, "Oxygen-doped semi-insulating silicon grown by low-temperature rapid thermal chemical vapor deposition," Abstracts of 23rd IEEE Semiconductor Interface Specialists Conf. (1992).
56. Z. Matutinovic-Krstelj, C.W. Liu, X. Xiao, and J.C. Sturm, "Evidence of phonon-absorption-assisted electron resonant tunneling in Si/Si1-xGex diodes," J. Vac. Sci. Tech. B 11, pp. 1145-1148 (1993).
57. V. Venkataraman, C.W. Liu, and J.C. Sturm, "High mobility electron gases and modulation doped field effect transistors fabricated in Si/Si1-xGex by rapid thermal chemical vapor deposition," J. Vac. Sci. Tech. B 11, pp. 1176-1178 (1993).
58. X. Xiao, J.C. Sturm, S.R. Parihar, S.A. Lyon, D. Meyerhofer, S. Palfrey, and F.V. Shallcross, "Modeling of parasitic barrier effects in silicide/Si1-xGex schottky-barrier infrared detectors fabricated with a silicon sacrificial layer," J. Vac. Sci. Tech. B 11, pp. 1168-1171 (1993).
59. T.A. Kennedy, E.R. Glaser, D.J. Godbey, P.E. Thompson, C.H. Chern, K.L. Wang, X. Xiao, and J.C. Sturm, "ODMR of sharp luminescence from Si/Si1-xGex superlattices," J. Vac. Sci. Tech. B 11, pp. 1154-1158 (1993).
60. (Invited) E.J. Prinz, X. Xiao, P.V. Schwartz, and J.C. Sturm, "Electrical characteristics of double-base Si/Si1-xGex/Si heterojunction bipolar transistors," J. Vac. Sci. Tech. B 11, pp. 1193-1198 (1993).
61. (Invited) J.C. Sturm, X. Xiao, Q. Mi, L.C. Lenchyshyn, and M.L.W. Thewalt, "Luminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 298, pp. 69-78 (1993).
62. L.C. Lenchyshyn, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Photoluminescence of thin Si1-xGex quantum wells," Mat. Res. Soc. Symp. Proc. 298, pp. 79-84 (1993).
63. T. Steiner, M.L.W. Thewalt, D.C. Houghton, J.-P. Noel, N.L. Rowell, J.C. Sturm, and X. Xiao, "Visible photoluminescence from Si1-xGex quantum wells," Mat. Res. Soc. Symp. Proc. 298, pp. 15-19 (1993).
64. (Invited) J.C. Sturm, X. Xiao, Q. Mi, A. St. Amour, L.C. Lenchyshyn and M.L.W. Thewalt, "Opto-electronic applications of Si1-xGex heterostructures," Tech. Dig. Int. Conf. Solid State Device and Materials, pp. 198-200 (1993).
65. V. Higgs, E.C. Lightowlers, J.C. Sturm, X. Xiao, and P.J. Wright, "CL imaging of Si/Si1-xGex/Si quantum wells grown by RTCVD," Proc. Microscopy of Semiconductor Materials 8, Oxford, UK, (1993).
66. C.W. Liu and J.C. Sturm, "Growth of low-temperature cubic SiC on tilted and non-tilted (100) Si with 60-V breakdown schottky barriers," Proc. Vth Int. Conf. on Silicon Carbide and Related Materials, Inst. of Phys. Conf. Series Num. 137 (Inst. of Physics, London) pp. 83-36 (1993).
67. J.C. Sturm, X. Xiao, Q. Mi, C.W. Liu, A. St. Amour, Z. Matutinovic-Krstelj, L.C. Lenchyshyn and M.L.W. Thewalt, "Photoluminescence and electroluminescence processes in Si1-xGex/Si heterostructures grown by chemical vapor deposition," Mater. Sci. and Eng. B21, pp. 307-311 (1993).
68. V. Venkataraman, C.W. Liu, J.C. Sturm, "Effect of alloy scattering on low-temperature mobilities of two-dimensional holes and electrons in Si/Si1-xGex heterostructures," Tech. Prog. Elec. Mat. Conf. pp. A12 (1993).
69. Z. Matutinovic-Krstelj, J.C. Sturm, and E. Chason, "Growth pressure effects on Si/Si1-xGex chemical vapor deposition," Tech. Prog. Elec. Mat. Conf., 39, p. A39 (1993).
70. C.W. Liu, J.C. Sturm, and E.A. Fitzgerald, "Structural and electrical characterization of low-temperature cubic SiC on (100) Si," Tech Prog. Elec. Mat. Conf. pp. A41 (1993).
71. Z. Matutinovic-Krstelj, E.J. Prinz, V. Venkataraman, and J.C. Sturm, "A comprehensive study of lateral and vertical current transport in Si/Si1-xGex/Si HBT's," Tech. Dig. Int. Elec. Dev. Mtg.
    pp. 87-90 (1993).
72. J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and M.M. Weeks, "Schottky barrrier heights of Pt and Ir silicides on SiGe," Mat. Res. Soc. Symp. Proc. 320, pp. 293 (1993).
73. J.R. Jimenez, X. Xiao, J.C. Sturm, P.W. Pellegrini, and J.F. Bockman, "Silicide/SiGe schottky diode infrared detectors," Proc. SPIE Symposium on OE/Aerospace Sensing, pp. 393-403 (1994).
74. J.C. Sturm, A. St. Amour, S.L. Clark, Y. Lacroix and M.L.W. Thewalt, "MBE-like deep photoluminescence in CVD Si/Si1-xGex/Si quantum wells created by ion implantation and annealing," Tech. Prog. Elec. Mat. Conf. pp. A13 (1994).
75. C.W. Liu, A. St. Amour, and J.C. Sturm, "Low temperature chemical vapor deposition of SiGeC alloys on (100) Si substrates," Tech. Prog. Elec. Mat. Conf. pp. A15 (1994).
76. C.W. Liu, J.C. Sturm, Y.R.J. Lacroix, M.L.W. Thewalt, and D.D. Perovic, "Growth and photoluminescence of strained <110> Si/Si1-x Gex/Si quantum wells grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 342, pp. 37-42 (1994).
77. C.W. Cullen and J.C. Sturm, "Temperature measurement of metallized silicon wafers by infrared transmission using single- and double-pass geometries," Mat. Res. Soc. Symp. Proc. 342, pp. 23-28 (1994).
78. A. St. Amour and J.C. Sturm, "Deposition of monolayer-scale germanium/silicon heterostructures by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 342, pp. 31-36 (1994).
79. Z. Lilienthal-Weber, P.V. Schwartz, C.C. Wu, and J.C. Sturm, "Structure of oxygen-doped silicon grown by chemical vapor deposition at low temperature," J. Vac. Sci. Tech. B12, pp. 2511-2515 (1994).
80. P.V. Schwartz and J.C. Sturm, "Oxygen incorporation during low-temperature chemical vapor deposition growth of epitaxial silicon films," Tech. Prog. Elect. Mat. Conf. pp. A29-A30 (1994).
81. M.E. Thompson, C.C. Wu, J. Chun, P.E. Burrows, S.R. Forrest, R.A. Register and J.C. Sturm, "Heterostructure electroluminescent diodes prepared from poly (p-phenylene vinylene) and metal-hydroxyquinoline compounds," Tech. Prog. Elec. Mat. Conf. pp. A28 (1994).
82. P.V. Schwartz and J.C. Sturm, "Epitaxial growth of silicon-based heterostructures by low temperature rapid thermal chemical vapor deposition," Proc. 2nd Int. RTP Conf.: RTP '94, (1994).
83. M.E. Thompson, C.C. Wu, J. Chun, P.E. Burrows, S.R. Forrest, R.A. Register, and J.C. Sturm, "Heterostructure electroluminescent diodes prepared from poly (p-phenylene vinylene) and aluminum-tris (8 quinolate)," Polymer Preprints 35, (1994).
84. J. Tian, M.E. Thompson, C.C. Wu, J.C. Sturm, R.A. Register, M.J. Marsella, and T.M. Swager, "Luminescent properties of conjugated poly(p-pyridyl-vinylene) and poly (p-pyridiniumvinylene)," Polymer Preprints 35, pp. 761 (1994).
85. St. Amour, J.C. Sturm, Y. Lacroix, and M.L.W. Thewalt, "Enhancement of high-temperature photoluminescence in strained Si1-xGex/Si heterostructures by surface passivation," Abstracts of 25th IEEE Semiconductor Interface Specialists Conf. (1994).
86. L. Lanzerotti, A. St. Amour, C.W. Liu, and J.C. Sturm, "Si/Si1-x-y GexCy/Si heterojunction bipolar transistors," Tech. Dig. Int. Elec. Dev. Mtg. pp. 930-932. (1994).
87. (Invited) J.C. Sturm, P.V. Schwartz, and Z. Lilienthal-Weber, "Semi-insulating oxygen-doped silicon by low temperature chemical vapor deposition for SOI applications," Physical and Technical Problems of SOI Structures and Devices, ed's J.P. Colinge, V.S. Lysenko, and A.N. Nazarov, NATO ASI Series, 3. High Technology 4, pp. 55-66 (1995).
88. E. Chason, T.M. Mayer, Z. Matutinovic Krstelj, and J.C. Sturm, "Energy dispersive x-ray reflectivity characterization of semiconductor heterostructures and interfaces," Proceed. of NIST Semiconductor Characterization Workshop, Gaithersburg, MD. (Jan-Feb., 1995).
89. (Invited) J.C. Sturm, A. St. Amour, Y. Lacroix, and M.L.W. Thewalt, "Luminescence in Si/strained Si1-xGex heterostructures," Mat. Res. Soc. Symp. Proc. 379, pp. 387-398 (1995).
90. C.W. Liu, A. St. Amour, J.C. Sturm, Y.R.J. Lacroix, and M.L.W. Thewalt, "Defect-free band-edge photoluminescence in SiGeC strained layers grown by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 379, pp. 441-446 (1995).
91. H. Xu and J.C. Sturm, "Emissivity of rough silicon surfaces: measurement and calculations," Mat. Res. Soc. Symp. Proc. 387, pp. 29-34 (1995).
92. J.C. Sturm and A. Reddy, "Low temperature (>=400oC) silicon pyrometry at 1.1 *m," Mat. Res. Soc. Symp. Proc. 387, pp. 137-142 (1995).
93. St. Amour, J.C. Sturm, K. Brunner, J. Weber, L. Lacroix, and M.L.W. Thewalt, "Band-Edge photoluminescence in pseudomorphically strained Si1-x-yGexCy layers on Si(100) substrates," Tech. Prog. Elec. Mat.Conf. pp. A37-38 (1995).
94. C.C. Wu, J. Tian, J.C. Sturm, M.E. Thompson, and R.A. Register, "Electroluminescence from polymer blends of poly (3-n-butyl-p-phridyl vinylene) and poly (9-vinylcarbazole)," Tech. Prog. Elec. Mat. Conf., pp. A53 (1995).
95. C.L. Chang, A. St. Amour, L.D. Lanzerotti, and J.C. Sturm, "Growth and electrical performance of heterojunction p+-Si1-x-yGexCy/p--Si diodes," Mat. Res. Soc. Symp. Proc. 402, pp. 437-442 (1995).
96. E. Cheng, J.C. Sturm, I.W. Wu, and T.J. King, "Modeling of leakage current distributions in series-connected polysilicon thin film transistors," Tech. Dig. Second Inter. Work. on Active Matrix LCD's, Lehigh University, pp. 102-105 (1995).
97. C.C. Wu, J.C. Sturm, M.E. Thompson, and R.A. Register, "Electroluminescent devices using polymer blend thin films," Tech. Dig. Inter. Elec. Dev. Mtg. pp. 821-824 (1995).
98. St. Amour and J.C. Sturm, "Numerical simulation of the temperature dependence of band-edge photoluminescence and electroluminescence in strained Si1-xGex/Si heterostructures," Tech. Dig. Inter. Elec. Dev. Mtg. pp. 769-772 (1995).
99. (Invited) J.C. Sturm, A. St. Amour, and C.W. Liu, "Rapid thermal chemical vapor deposition of silicon-based heterostructures," Transient Thermal Processing Techniques in Electronic Materials, The Minerals, Metals, and Materials Society, pp. 11-16 (1996).
100. J.C. Sturm and A. St. Amour, "Low temperature chemical vapor deposition of column-IV heterostructures," Ext. Abs. of Thirteenth International Conf. on Chemical Vapor Deposition, Electrochem. Soc. 96-1, (1996).
101. C.C. Wu, J.C. Sturm, R.A. Register, and M.E. Thompson, "Electron injection effects in electroluminescent devices using polymer blend thin films," Mat. Res. Soc. Symp. Proc. 424, pp. 489-494 (1996).
102. H. Xu and J.C. Sturm, "Effects of reflective surfaces on silicon emissivity and temperature measurements," Mat. Res. Soc. Symp. Proc. 429, pp. 297-302 (1996).
103. J.C. Sturm and A. Wolfe, "Breadth and unity: a revised electrical engineering curriculum at Princeton University," Proc. Amer. Soc. Eng'g. Educ. Conf. Washington, DC, (June 1996).
104. K. Pangal, S.L. Firebaugh, and J.C. Sturm, "Microelectromechanical charge sensing devices," Tech. Dig. Dev. Res. Conf. pp. 118-119 (1996).
105. V. Venkataraman and J.C. Sturm, "High field drift velocity of 2 DEG in Si/SiGe heterostructures as determined by magnetoresistance techniques," Tech. Dig. Dev. Res. Conf. pp. 26-27 (1996).
106. C.C. Wu, J.C. Sturm, R.A. Register, and M.E. Thompson, "Strong electroluminescence from molecularly doped polymers," Tech. Prog. Elec. Mat. Conf. pp. 15-16 (1996).
107. M. Yang and J.C. Sturm, "Strain field effects on bandgap and band alignment in pseudomorphic zero- and one-dimensional structures," Tech. Prog. Elec. Mat. Conf. 72 (1996).
108. C.C. Wu, S. Theiss, M.H. Lu, J.C. Sturm, and S. Wagner, "Integration of organic LED's and amorphous Si TFT's onto unbreakable metal foil substrates," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 957-959 (1996).
109. L.D. Lanzerotti, J.C. Sturm, E. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBT's by carbon incorporation," Tech. Dig. Inter. Elec. Dev. Mtg,
     pp. 249-252 (1996).
110. C.C. Chang, A. St. Amour, and J.C. Sturm, "Effect of carbon on the valence band offset of Si1- x- yGexCy/Si heterojunction," Tech. Dig. Inter. Elec. Dev. Mtg, pp. 257-260 (1996).
111. (Invited) A. St. Amour, L.D. Lanzerotti, C.C. Chang, and J.C. Sturm, "Optical and electrical properties of Si1-x-yGexCy thin films and devices," Europe. Mat. Res. Soc. Symp. Proc. (1996), and Thin Solid Films 294, pp. 112-117 (1997).
112. M. Carroll, L.L. Lanzerotti, C.C. Chang, and J.C. Sturm, "Silicon epitaxial regrowth in RTCVD for passivation of reactive ion-etched Si/SiGe/Si microstructures," Tech. Prog. Elect. Mater. Conf. pp. 16, (1997).
113. S.J. Fonash, O. Awadelkarim, J.L. Crowley, T.N. Jackson, A. Kahn, J.C. Sturm, and S. Wagner, "Device technology for lightweight panoramic displays," Proc. SPIE, 3057, pp. 570-580 (1997).
114. J.L. Crowley, O.O. Awadelkarim, S.J. Fonash, T.N. Jackson, A. Kahn, T.M. Peterson, J.C. Sturm and S. Wagner, "Industry/University teaming for display research," Proc. SPIE 3057, pp. 60-67 (1997).
115. C.C. Wu, S.D. Theiss, G. Gu, M.H. Lu, J.C. Sturm, S. Wagner, and S.R. Forrest, "Organic LEDs integrated with a-Si TFTs on lightweight metal substrates," Digest of Technical Papers, SID International Symposium, pp. 67-70 (1997).
116. D.L. Marcy, J.C. Sturm, M. Benes, and S. Chial, "3.3*m pyrometry in single sided RTA from 400-700 oC using in-situ measurement of reflection and transmission," Mat. Res. Soc. Symp. Proc. 470, pp. 23-28 (1997).
117. C.W. Liu, and J.C. Sturm, "Polycrystalline Si growth on ß-SiC by rapid thermal chemical vapor deposition," Mat. Res. Soc. Symp. Proc. 470, pp. 127-132 (1997).
118. L.D. Lanzerotti, J.C. Sturm, E.A. Stach, R. Hull, T. Buyuklimanli, and C. Magee, "Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation," Mat. Res. Soc. Symp. Proc. 469,
     pp. 297-302 (1997).
119. K. Pangal and J.C. Sturm, "Correlation of plasma-induced charging voltage measured in-situ by microelectromechanical sensors with device degradation," 2nd Inter. Symp. on Plasma Process-Induced Damage, pp. 203-206 (1997).
120. (Invited) J.C. Sturm, C.C. Wu, S.D. Theiss, and S. Wagner, "Doped-polymer organic light emitting diodes and OLED device integration," Tech. Dig. 12th International Miyazaki Symposium on Optical and Electrical Properties of Organic Materials, Fiber Society Japan, pp. S42-43 (1997).
121. T.R. Hebner, C.C. Wu, D. Marcy, and J.C. Sturm, "Ink-jet printing of highly fluorescent molecularly doped polymers," Tech. Prog. Elec. Mater. Conf. pp. 3 (1997).
122. D.L. Marcy and J.C. Sturm, "Teaching systems performance limitations through an integrated circuit fabrication laboratory," Proc. Amer. Soc. Eng'g. Education Annual Conf. (June 1997).
123. (Invited) J.C. Sturm and C.C. Wu, "Integrated organic light emitting diode structures using doped polymers," Conf. Record 1997 Inter. Disp. Res. Conf, pp. F-11-F-18 (Sept. 1997).
124. (Invited) J.C. Sturm, C.C. Wu, H.H. Lu, S.D. Theiss, E. Ma, and S. Wagner, "Processing and integration issues in organic light emitting displays," Proc. 1997 Inter. Semi. Dev. Res. Symp. pp. 417-420 (Dec. 1997).
125. E.Y. Ma, S.D. Theiss, M.H. Lu, C.C. Wu, J.C. Sturm, and S. Wagner, "Thin film transistors for foldable displays," Tech. Dig. Int. Elec. Dev. Mtg. pp. 535-538 (1997).
126. C.L. Chang, S. Shukla, V. Venkataraman, J.C. Sturm, and M. Shayegan, "Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/ (100) modulation doped heterostructures," Tech. Dig. 7th Inter. Symp. Silicon Molec. Beam Epitaxy, pp. 45-46 (1997).
127. E.Y. Ma, S.D. Theiss, M.H. Lu, C.C. Wu, J.C. Sturm and S. Wagner, "Organic light-emitting diode/thin film transistor integration for foldable displays," Conf. Rec. International Display Res. Conf., Toronto, Sept. 15-19, pp. L78-81 (1997).
128. S.D. Theiss, C.C. Wu, M. Lu, J.C. Sturm and S. Wagner, "Flexible, lightweight steel-foil substrates for a-Si:H thin-film transistors," Mat. Res. Soc. Symp. Proc. 471, pp. 21-26 (1997).
129. M.S. Carroll, L.D. Lanzerotti, and J.C. Sturm, "Quantitative measurement of reduction of boron diffusion by substitutional carbon incorporation," Mat. Res. Soc. Symp. Proc. 527, pp. 417-422 (1998).
130. K. Pangal, J.C. Sturm, and S. Wagner, "Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT's," Tech. Dig. Int. Elec. Dev. Mtg. pp. 261-264 (1998).
131. C.L. Chang, S.P. Shukla, W. Pan, V. Venkataraman, J.C. Sturm, and M. Shayegan, "Effective mass measurement in two-dimensional hole gas in strained Si1-x-yGexCy/Si(100) modulation doped heterstructures," Thin Solid Films 321, pp. 51-54 (1998).
132. K. Pangal, J.C. Sturm and S. Wagner, "Effect of plasma treatment on crystallization behavior of amorphous silicon films," Mat. Res. Soc. Symp. Proc. 507, pp. 577-582 (1998).
133. (Invited) J.C. Sturm, M. Yang, C.L. Chang, and M.S. Carroll, "Novel applications of rapid thermal chemical vapor deposition for nanoscale MOSFET's," Mat. Res. Soc. Symp. Proc. 525, pp. 273-281 (1998).
134. C.L. Chang and J.C. Sturm, "Polycrystalline Si1-x-yGexCy for suppression of boron penetration in PMOS structures," Mat. Res. Soc. Symp. Proc. 525, pp. 213-218 (1998).
135. C.L. Chang, L.P. Rokhinson, and J.C. Sturm, "Direct optical measurement of the valence band offset of p+ Si1-x-yGexCy /p- Si(100) by heterojunction internal photoemission," Mat. Res. Soc. Symp. Proc. 533, pp. 245-250 (1998).
136. R.M.A. Dawson, Z. Shen, M.H. Lu, J.C. Sturm et al, "Design of an improved pixel for a polysilicon active-matrix organic LED display," Dig. Soc. Info. Display Inter. Symp. pp. 11-14 (1998).
137. K.A. Killeen, T.R. Hebner, F. Pschenitzka, M.H. Lu, M.E. Thompson, and J.C. Sturm, "Single-layer polymer blend organic light emitting diodes with electron transport polymers," Ext. Abs. Elec. Mat. Conf, pp.75 (1998).
138. M.S. Carroll, C.L. Chang, J.C. Sturm, and T. Buyuklimanli, "Complete suppression of oxidation enhancement of boron diffusion using substitutional carbon incorporation," Ext. Abs. Elec. Mat. Conf. pp.14 (1998).
139. M.H. Lu, E. Ma, J.C. Sturm, and S. Wagner, "Amorphous silicon TFT active-matrix OLED pixel," Proc. LEOS'98 1, pp. 130-131 (1998).
140. (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, C.C. Wu, and W. Wilson, "Patterning approaches and system power efficiency consideration for organic LED displays," Proc. SPIE 3476, pp. 208-216 (1998).
141. (Invited) J.C. Sturm. M. Yang, M.S. Carroll, and C.L. Chang, "Si1-x-yGexCy alloys: an enabling technology for scaled high performance silicon-based heterojunction devices," Proc. IEEE Silicon Monolithic Integrated Circuits in RF Systems, 1-2 (1998).
142. R.M.A. Dawson, M.H. Lu, J.C. Sturm et al, "Impact of transient response of organic light emitting diodes on the design of active matrix OLED displays," Tech. Dig. Int. Elec. Dev. Mtg., pp. 875-878 (1998).
143. L. Montès, L. Tsebeskov, P.M. Fauchet, K. Pangal, J.C. Sturm and S. Wagner, "Optical analysis of plasma enhanced crystallization of amorphous silicon films," Mat. Res. Soc. Symp. Proc. 536, pp. 505-510 (1999).
144. K. Pangal, Y. Chen, J.C. Sturm, S. Wagner, "Integrated amorphous and polycrystalline silicon TFTs with a single silicon layer," Mat. Res. Soc. Symp. Proc. 557, pp. 629-634 (1999).
145. X. Jiang, R.A. Register, F. Pschenitzka, and J.C. Sturm, Kelly A. Killeen, Mark E. Thompson, "Doped organic light-emitting diodes based on random copolymer containing both hole and electron transport groups," Mat. Res. Soc. Symp. Proc. 558, pp. 433-438 (1999).
146. R.M.A. Dawson, Z. Shen, D.A. Furst, S. Connor, J. Hsu, M.G.Kane, R.G. Stewart, M.H. Lu, A. Ipri, J.C. Sturm, et al, "A Polysilicon Active Matrix Organic Light Emitting Diode Display with Integrated Drivers," SID Symposium Digest 30, 438 (1999).
147. M. Carroll, M. Yang, and J.C. Sturm, "Ultrasharp phosphorus profiles in silicon epitaxy by low temperature rapid thermal chemical vapor deposition," Ext. Abs. Electrochem. Soc, p. XX (1999), and published as "Suppressed Phosphorus Autodoping in Silicon Epitaxy for Ultrasharp Phosphorus Profiles by Low Temperature Rapid Thermal Chemical Vapor Deposition," in Advances in Rapid Thermal Processing, Electrochem Soc, 99-10, pp. 319-326 (1999).
148. (Invited) J.C. Sturm, T.R. Hebner, F. Pschenitzka, and M.H. Lu, "System constraints and printing for large-area organic light-emitting displays," Proc. Asia-Pacific Symp. on Organic Electroluminescent Materials and Devices, 8.1 (1999).
149. (Invited) J.C. Sturm, M. Yang, and M.S. Carroll, "Doped and undoped SiGeC layers for dopant profile control in sub-100 nm vertical MOSFET's," Tech. Dig. Silicon Nanoelectronics Workshop, pp. 56-57 (1999).
150. Y. Chen, K. Pangal, J.C. Sturm and S. Wagner, "P-channel thin film transistor of microcrystalline silicon directly deposited at 320 oC," Tech. Dig. IEEE Dev. Res. Conf., pp. 168-169 (1999).
151. E. Stewart, M. Carroll, C.L. Chang, and J.C. Sturm, "Boron segregation in polycrystalline Si1-x-yGexCy alloys," Abs. Elec. Mat. Conf. pp. 18-19 (1999).
152. (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, and S. Troian, "Printing approaches for large-area color organic LED displays," Proc. SPIE 3797, pp. 266-274 (1999).
153. M. Yang, M.S. Carroll, and J.C. Sturm, "Doped vs. undoped SiGeC layers in sub-100 nm vertical p-channel MOSFET's," Dig. of Int. Conf. Silicon Epitaxy and Heterostructures pp. I5-I6 (1999).
154. M. Wu, Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "High-performance polysilicon thin film transistors on steel substrates," Proc. 18th Int. Conf. on Amorphous and Microcrystalline Semiconductors, pp. 1284-1288 (1999).
155. Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "P-channel microcrystalline silicon thin film transistor fabricated at 320 oC," Proc. 18th Int. Conf. Amorph. and Microcryst. Silicon, (1999).
156. M. Wu, K. Pangal, J.C. Sturm and S. Wagner, "High temperature polycrystalline silicon thin film transistor on steel substrates," Tech. Dig. Int. Elec. Dev. Mtg., pp. 119-122, (1999).
157. M.S. Carroll, J.C. Sturm, and C.L. Chang, "Quantitative measurement of reduction of phosphorus diffusion by substitutional carbon incorporation," Mat. Res. Soc. Symp. Proc. 568, pp. 186 (1999).
158. (Invited) J.C. Sturm, F. Pschenitzka, T.R. Hebner, M.H. Lu, and S. Troian, "Large-area printing technologies for full color OLED integration," Organic Light Emitting Materials - 99, Frontier Science Research Conf, La Jolla, CA, Nov. (1999).
159. M. Yang, and J.C. Sturm, "Doped vs. undoped Si1xyGexCy layers in sub-100 nm vertical p-channel MOSFETs," Thin Solid Films 369, pp. 366-370 (2000).
160. Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "P channel thin film transistor and complementary metal-oxide-silicon inverter made of microcrystalline silicon directly deposited at 320 oC," J. Non-Cryst. Solids 266, pp. 1274-1278 Part B (2000).
161. M. Wu, Y. Chen, K. Pangal, J.C. Sturm, and S. Wagner, "High-performance polysilicon thin film transistors on steel substrates," J. Non-Cryst. Solids 266, pp. 1284-1288 Part B (2000).
162. M.S. Carroll, and J.C. Sturm, "Quantitative measurement of interstitial flux and surface super-saturation during oxidation of silicon," Mat. Res. Soc. Symp. Proc. 610, pp. B4.10.1-B4.10.6 (2000).
163. P.I. Hsu, M. Huang, S. Wagner, Z. Suo, and J.C. Sturm, "Plastic deformation of thin foil substrates with amorphous silicon islands into spherical shapes," Mat. Res. Soc. Symp. Proc. 621, pp. Q8.6.1-Q8.6.6 (2000).
164. M.H. Lu, C.F. Madigan, and J.C. Sturm, "Experiment and modeling of conversion of substrate-wave-guided modes to surface-emitted light by substrate patterning," Mat. Res. Soc. Symp. Proc. 621, pp. Q3.7.1-Q3.7.6 (2000).
165. C.F. Madigan, T.R. Hebner, J.C. Sturm, Richard A. Register, Sandra Troian, "Lateral dye distribution with ink-jet dye doping of polymer organic light emitting diodes," Mat. Res. Soc. Symp. Proc. 624, pp. 211-216 (2000).
166. (Invited) J.C. Sturm, M.S. Carroll, M. Yang, J. Gray, and E. Stewart, "Mechanisms and applications of the control of dopant profiles in silicon using Si1-x-yGeXCy layers grown by RTCVD," Proc. Electrochem Soc. 2000-9, pp. 309-320 (2000).
167. F. Pschenitzka, and J.C. Sturm, "Patterned dye diffusion using transferred photoresist for polymer OLED displays," Conf. Proc. SPIE 3476, pp. 208-216 (2000).
168. (Invited) J.C. Sturm, P.I. Hsu, S.M. Miller, H. Gleskova, A. Darhuber, M. Huang, S. Wagner, S. Troian, and Z. Suo, "Three-dimensional electronic surfaces," Mat. Res. Soc. Proc. 636, pp. D11.4.1-D11.4.12 (2000).
169. M.-H. Lu, C.F. Madigan, and J.C. Sturm, "Improved external coupling efficiency in organic light-emitting devices on high-index substrates," Tech. Dig. Int. Elec. Dev. Mtg. pp. 607-610 (2000).
170. H. Yin, J.C. Sturm, Z. Suo, R. Huang, K.D. Hobart, "Relaxation dynamics and electrical properties on SiGe islands on BPSG," Inter. Conf. On Alternative Substrate Technology, Lake Tahoe, CA, Jan. (2001).
171. (Invited) J.C. Sturm, M.S. Carroll, M. Yang, E. Stewart, and J. Gray, "Point defect engineering for dopant dontrol in silicon-based nanodevices," Tech. Dig. New Group IV Semiconductors: Control of Properties and Applications to Ultrahigh speed and Optoelectronic Devices, pp. III-02-1 - III-02-4 (2001).
172. E. Stewart, M. Carroll, and J.C. Sturm, "Threshold voltage stability of p-channel MOSFETs with heavily boron doped SiGeC gate layers," Proc. Electrochem. Soc. 2001-2, pp. 190-195 (2001).
173. (Invited) J.C. Sturm, P.I. Hsu, M. Huang, H. Gleskova, S. Miller, A. Darhuber, S. Wagner, Z. Suo, and S. Troian, "Technologies for Large-Area Electronics on Deformable Substrates," Proc. Electrochemical Soc. 2001-2, pp. 506-517 (2001).
174. M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, M. Berti, J. Stangl, G. Bauer, and D.J. Tweet, "Silicon interstitial driven loss of substitutional carbon from SiGeC structures," Mat. Res. Soc. Symp. Proc. 669, pp. J6.7.1-J6.7.6 (2001).
175. D. De Salvador, E. Napolitani, A. Coati, M. Berti, A.V. Drigo, M. Carroll, J.C. Sturm, J. Stangl, G. Bauer, and L. Lazzarini, "Carbon diffusion and clustering in SiGeC layers under thermal oxidation," Mat. Res. Soc. Symp. Proc. 669, pp. J6.8.1-J6.8.6 (2001).
176. E.J. Stewart, M.S. Carroll, and J.C. Sturm, "Boron segregation and electrical properties in polycrystalline SiGeC," Mat. Res. Soc. Symp. Proc. 669, pp. J6.9.1-J6.9.6 (2001).
177. K. Long, M.H. Lu, F. Pschenitzka, and J.C. Sturm "Novel three-color polymer light-emitting devices for passive-matrix flat panel displays," Dig. 59th Device Research Conf. pp. 179-180 (2001).
178. H. Yin, J.C. Sturm, Z. Suo, R. Huang, and K.D. Hobart, "Modeling of in-plane expansion and buckling of SiGe islands on BPSG," Tech. Abs. Elect. Mat. Conf. pp. 33, (2001).
179. J.E. Gray, M. Yang, H. Yin, J.C. Sturm, "Growth and stabilization of sub-100-nm vertical n-channel MOSFET's," Tech. Abs. Elect. Mat. Conf. pp. 39 (2001).
180. F. Pschenitzka, M.H. Lu, and J.C. Sturm, "Patterning of OLED cathodes by metal dry etching," Dig. Tech. Papers Int. Symp. Soc. Inf. Disp. pp. 731-734 (2001).
181. (Invited) M.H. Lu and J.C. Sturm, "External coupling and cathode effects in organic light-emitting devices: modeling and experiments," Proc. SPIE, XX, pp. xx-xx (2001).
182. R. Huang, Z. Suo, H. Yin, and J. Sturm, "Relaxation of a strained elastic film on a viscous layer," Mat. Res. Soc. Symp. Proc. 695, pp. L3.14.1 - L3.14.6 (2001).
183. (Invited) Y. Vlasov, X. Zheng Bo, J.C. Sturm, and D.J. Norris, "On-chip assembly of silicon photonic band gap crystals," Mat. Res. Soc. Symp. Proc. 707, xx-xx (2001).
184. K. Long, F. Pschenitzka, and J.C. Sturm, "Three-color passive-matrix pixel array with dye-diffusion-patterned polymer thin-film and a novel tri-layer structure," Mat. Res. Soc. Symp. Proc. 708, pp. BB6.8.1 - BB6.8.6 (2001).
185. X.Z. Bo, L. Rokhinson, H. Yin, D.C. Tsui, and J.C. Sturm, "SiGe nanostructures fabricated by atomic force microscopy oxidation," Mat. Res. Soc. Symp. Proc. 686, pp. A6.5.1 - A6.5.6 (2001).
186. L.R. Huang, J.O. Tegenfeldt, J.J. Kraeft, J.C. Sturm, R.H. Austin, E.C. Cox, "Generation of large-area tunable uniform electric fields in microfluid arrays for rapid DNA separation," Tech. Dig. Int. Elect. Dev. Mtg., pp. 363-366 (2001).
187. F. Pschenitzka, K. Long, and J.C. Sturm, "Solvent vapor-enhanced dye diffusion for full-color OLED fabrication," Mat. Res. Soc. Symp. Proc. 665, pp. C9.5.1 - C9.5.7 (2001).
188. (Invited) S. Wagner, S.J. Fonash, T.N. Jackson, and J.C. Sturm, "Flexible display enabling technology," SPIE 4362, pp. 226-244 (2001).
189. X.Z. Bo, "Large-grain polysilicon films with low intragranular defect density by low-temperature solid-phase crystallization," Mat. Res. Soc. Symp. Proc. 715, pp. A16.4.1 - A16.4.6 (2002).
190. M.S. Carroll, J.C. Sturm, E. Napolitani, D. De Salvador, and M. Berti, "Thermal stability and substitutional carbon incorporation far above solid-solubility in Si1-xCx and Si1-x-yGexCy layers grown by chemical vapor deposition using disilane," Mat. Res. Soc. Symp. Proc. 717, pp. C4.3.1 - C4.3.7 (2002).
191. T. Graves-Abe, F. Pschentizka, J.C. Sturm. "Anomalous temperature dependence in solvent-enhanced dye diffusion in polymer films," Mat. Res. Soc. Symp. Proc., Vol. 725, P3.1.1 (2002).
192. R. Huang, H. Yin, J. Liang, J.C. Sturm, K.D. Hobart, Z. Suo, "Mechanics of relaxing SiGe islands on a viscous glass," Acta Mechanica Sinica 18, pp. 441-456 (2002).
193. P.I. Hsu, H. Gleskova, R. Bhattacharya, Z. Xi, Z. Suo, S. Wagner, J.C. Sturm, "Thin film transistors on 3-D Shapes: electrical performance under mechanical strain," Mat. Res. Soc. Symp. G Materials for Flexible Elect. Disp. And Dev. (2002). K.D. Hobart
194. H. Yin, R. Huang, K.D. Hobart., Z. Suo, S.R. Shieh, T. Duffy, and J.C. Sturm, "Prevention of buckling during SiGe relaxation on compliant substrates," Mat. Res. Soc. Symp. Proc. Spring (2002).
195. H. Yin, K.D. Hobart, R. Huang, J. Liang, Z. Suo, S.R. Shieh, T.S. Duffy, and J.C. Sturm. "High Ge-content relaxed Si1-xGex layers by relaxation on compliant substrate with controlled oxidation," EMC (2002).
196. H. Yin, R.L. Peterson, K. D. Hobart, S.R. Shieh, T.S. Duffy, and J. C. Sturm, “High Ge Content (~0.6) Relaxed SiGe Layers and SiGe/Ge Structures by Compliant Substrate Approaches," Mat. Res. Soc. Symp. Proc. 765, pp. D4.7.1/G1.7.1 - D4.7.5/G1.7.5
197. L.R. Huang, J.O. Tegenfeldt, J.C. Sturm, R.H. Austin and E.C. Cox. "A DNA Prism: Physical principles for optimizing a microfabricated DNA separation device," IEDM pp. 211-214 (2002).
198. L.R. Huang, J.O. Tegenfeldt, J.C. Sturm, R.H. Austin and E. Cox, "A microfabricated device for separating ~200 kilo-base-pair DNA molecules in ~ 15 seconds," MicroTAS pp. 51-53 (2002).
199. J.C. Sturm, H. Gleskova, T.N. Jackson, S.J. Fonash, and S. Wagner, "Enabling technologies for plastic displays," Proc. SPIE 4712, pp. 222-236 (2002).
200. X.-Z. Bo, L. P. Rokhinson, J. C. Sturm, "Silicon epitaxial regrowth passivation of SiGe nanostructures pattered by AFM oxidation," Materials Research Society Symposium Proceedings, 737: E14.5 (2003).
201. M. Wu, J.C. Sturm and S. Wagner, "Polycrystalline silicon thin film transistors for CMOS on flexible steel foil substrates, in Polycrystalline Semiconductors VII," Solid State Phenomena vol. 93, Scitec Publications Ltd, Zurich, Switzerland, pp. 3-12 (2003).
202. Haizhou Yin, R.L. Peterson, K.D. Hobart, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "High Ge content (~0.6) relaxed SiGe layers by compliant substrates approaches," Proc. Symp. Mat. Res. Soc. vol. 768, pp. 15-19 (2003).
203. X.-Z. Bo, L.P. Rokhinson, and J. C. Sturm, "SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth," Tech. Dig. Third International Conference on SiGe(C) Epitaxy and Heterostructures III, pp. 129-130 (2003).
204. H. Yin, K.D. Hobart, R.L. Peterson, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Strained-Si-on-Insulator MOSFETs without Relaxed SiGe Buffer Layer," Tech. Dig. Third International Conference on SiGe(C) Epitaxy and Hetereostructures, pp. 181-183 (2003).
205. X.-Z. Bo, L. P. Rokhinson, D. C. Tsui, and J. C. Sturm, "SiGe single-hole transistor fabricated by AFM oxidation and epitaxial regrowth," Tech. Dig. Device Research Conference, pp.129-130 (2003).
206. H. Yin, K.D. Hobart, S.R. Shieh, T.S. Duffy, and J.C. Sturm, "Strain partition of Si/SiGe and SiO2/SiGe islands on compliant oxide," Ext. Abs. 45th Electronic Materials Conference, p. 38 (2003).
207. L.R. Huang, J.C. Sturm, R.H. Austin and E.C. Cox, "Enhanced Brownian ratchet array for DNA separation using flow angle optimization," Proc. Micro TAS, pp. XX (2003).
208. H. Yin, K.D. Hobart, R.L. Peterson, S.R. Shieh, T.S. Duffy, F.J. Kub, and J.C. Sturm, "Fully-depleted strained-Si MOSFETs on insulator without SiGe buffers," Tech. Dig. International Electron Device Meeting IEDM, pp. 53-56 (2003).
209. (Plenary talk) J.C. Sturm, L.R. Huang, J.O. Tegenfeldt, H. Cao, S.Y. Chou, E.C. Cox, and R.H. Austin, "Nanofluidic devices for genomic analysis," Proc. 12th Intern. Workshop on the Physics of Semiconductor Devices (IWPSD-2003), K.N. Bhat and A. DasGupta, editors, Vol. 1, pp.51-56 (2003).
210. (Regular Talk) Stewart E.J., Sturm, J.C., "Segregation of Boron to Polycrystalline and Single-crystal Si1-x-yGexCy and Si1-yCy Layers," Proc. First International SiGe Technology and Device Meeting, p. 169, (2003).
211. K. Long, H. Gleskova, S. Wagner, J. C. Sturm, "Active Matrix OLED Using 150oC a-Si TFT Backplane Built on Flexible Plastic Substrate," SPIE Proc. Vol. 5080 (2003).
212. H. Gleskova, P.I. Hsu, Z. Xi, J.C. Sturm, Z. Suo, and S. Wagner, “Field-effect mobility of amorphous silicon thin film transistors under strain,” Journal of Non-Crystalline Solids 340, pp. 732-735 (2004).E.J. Stewart and J.C. Sturm JC, “Segregation of boron to polycrystalline and single-crystal Si 1-x-yGe xC y layers,” Appl. Surf. Science 224 pp. 87-90 (2004).
213. R.L. Peterson, H. Yin, and J.C. Sturm, "Island scaling effects on photoluminescence of strained SiGe/Si (100)," Mat. Res. Soc. Proc. Symp. , pp. 133-138 (2004).
214. M.S. Carroll and J.C. Sturm, “Boron diffusion and silicon self-interstitital recycling between SiGeC layers,” Mat. Res. Soc. Proc. Symp. , pp. C3.5.1-C3.5.6 (2004).
215. H. Yin, K.D. Hobart, S.R. Shieh, R. L. Peterson, T.S. Duffy, and J.C. Sturm, "Interference-enhanced Raman Scattering in Strain Characterization of Ultra-thin Strained SiGe and Si Films on Insulator," Mat. Res. Soc. Symp. Proc. , pp. 115-120 (2004).
216. J.C. Sturm, H. Yin, R.L. Peterson, K.D. Hobart, and F.J. Kub, "Strain engineering in SiGe/Si-on-insulator structures using compliant substrate and stress balance approaches," 2nd International SiGe Technology and Device Meeting (ISTDM), pp. 29-30 (2004).
217. K. Long, H. Gleskova, S. Wagner, and J. C. Sturm, “Short-channel amorphous-silicon TFT’s on high-temperature clear plastic substrates,” Dig. 62 nd Device Research Conf., pp. 89-90 (2004).
218. R.L. Peterson, H. Yin, K.D. Hobart, T.S. Duffy, and J.C. Sturm, "Uniaxially-tensile strained ultra-thin silicon-on-insulator with up to 1.1% strain," Tech. Prog. 2004 Electronic Materials Conference, pp. 33-34 (2004).
219. R.L. Peterson, K.D. Hobart, H. Yin and J.C. Sturm, "Crystal-direction dependence of uniaxial tensile strain in ultra-thin SOI," Proc. IEEE SOI Conference, pp. 39-41 (2004).
220. J.C. Sturm, H. Yin, R.L. Peterson, K.D. Hobart, and F.J. Kub, "High-perfection approaches to Si-based devices through strained layer epitaxy," Proc. International Conference on Solid State Devices and Materials (SSDM), pp. 220-221 (2004).
221. J.C. Sturm, S.P. Lacour, K.Long, P.I. Hsu, R. Bhattacharya, J. Jones, H. Gleskova, and S. Wagner, "Flexible and deformable electronic surfaces," Prog. Workshop on Frontiers in Electronics, p. 23 (2004).
222. K. Long, F. Pschenitzka, and J. C. Sturm, “Three-color passive-matrix pixel array with dye-diffusion-patterned thin-film and a novel tri-layer structure”, Mat. Res. Soc. Symp. Proc. 708, pp. BB6.8.1-BB6.8.6 (2001).
223. K. Long, H. Gleskova, S. Wagner, and J. C. Sturm, “Short Channel Amorphous-Silicon TFT’s on High-Temperature Clear Plastic Substrates”, Dig. 62nd Device Research Conf. pp. 89-90 (2004).
224. K. Long, I.-C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, “Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures”, Dig. 63rd Device Research Conf. pp. 141-142 (2005).
225. H. Jin and J.C. Sturm, "Large-Area Wet Micro-Printing (LAMP) for Organic Device Patterning," in Organic Thin-Film Electronics, edited by A.C. Arias, N. Tessler, L. Burgi, and J.A. Emerson (Mater. Res. Soc. Symp. Proc. 871E, Warrendale, PA , 2005), I6.27.
226. Troy Graves-Abe and J. C. Sturm, "Programmable Conductance Switching and Negative Differential Resistance in Nanoscale Organic Films" Mat. Res. Soc. Symp. Proc. 871E, I9.34 2005).
227. K. Long, A. Kattamis, I.-C. Cheng, Y. C. Gao, H. Gleskova, S. Wagner, J. C. Sturm, “High Temperature (250oC) amorphous-silicon TFT’s on clear plastic substrates”, SID’05 Tech. Dig., vol 36, pp. 313-315 (2005).
228. S. Wagner, I-C. Cheng, K. Long, A. Kattamis and J.C. Sturm "Managing mechanical stress in flexible active-matrix backplanes," Proc. Internat. Display Manufacturing Conference 2005, Taipei, Taiwan, Feb.21-24, 2005, pp. 415-418. Society for Information Display, Taipei Chapter, 1001 T-Hsueh Rd., Hsin Chu, Taiwan.
229. Sigurd Wagner, Rabin Bhattacharya, I-Chun Cheng, Helena Gleskova, Joyelle Jones, Alex Kattamis, Stéphanie P. Lacour, Ke Long, James C. Sturm and Candice Tsay, Princeton University, Department of Electrical Engineering and Princeton Institute for the Science and Technology of Materials, Teng Li and Zhigang Suo Division of Engineering and Applied Sciences, Harvard University, April, 2005, Invited talk, Symp. Material Research Society, San Francisco, CA, Flexible, Conformal, and Elastic Electronic Surfaces.
230. I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm, and Sigurd Wagner, "Stress compensation for overlay registration in the fabrication of a-Si:H TFTs on organic polymer foil substrates," presented at USDC 4th Annual Flexible Display & Microelectronics Conference, 10.4, Phoenix, AZ, USA, Feb 2005.
231. S. Wagner, R. Bhattacharya, I-C. Cheng, H. Gleskova, J. Jones, A. Kattamis, S. P. Lacour, K. Long, J. C. Sturm, C. Tsay, T. Li, and Z. Suo, "Flexible, conformal, and elastic electronic surfaces," presented at Mat. Res. Soc. Symp., H2.1, San Francisco, CA, USA, March 2005.
232. Alex Kattamis, I-Chun Cheng, Ke Long, James C. Sturm, and Sigurd Wagner, "Nanocrystalline silicon thin film transistors on optically clear polymer foil substrates," Mat. Res. Soc. Symp. Proc., 870E, H2.7, 2005.
233. I-Chun Cheng, Alex Kattamis, Ke Long, James C. Sturm, and Sigurd Wagner, "SiNx stress control for overlay registration in a-Si:H TFTs on flexible foil substrates," presented at Mat. Res. Soc. Symp., A17.2, San Francisco, CA, USA, March 2005.
234. K. Long, A. Kattamis, I-C. Cheng, Y. X. Gao, H. Gleskova, S. Wagner, J. C. Sturm, "High-temperature (250°C) amorphous-silicon TFT's on clear plastic substrates," Digest of Technical Papers (2005 SID International Symposium, May 22-27, 2005, Boston), Jay Morreale Ed., SID, XXXVI, San Jose, pp. 313-315, 2005.
235. A. Kattamis, I-C. Cheng, K. Long, J. C. Sturm, and S. Wagner, "Dimensionally stable processing of a-Si TFTs on polymer foils," presented at 47th Annual TMS Electronic Materials Conference, Santa Barbara, CA, X8, 2005.
236. K. Long, I-C. Cheng, A. Kattamis, H. Gleskova, S. Wagner, J. C. Sturm, "Increased reliability of a-Si TFT's deposited on clear plastic substrates at high temperatures," Dig. 63rd Device Research Conf., pp. 141-142, 2005.
237. Alex Kattamis, Russell J. Holmes, I-Chun Cheng, Ke Long, James C. Sturm, Stephen R. Forrest, and Sigurd Wagner, "TFTs of nanocrystalline silicon fabricated on clear polymer foils for flexible AMOLED displays," presented at 21st International Conference on Amorphous and Nanocrystaline Semiconductors (ICANS21), Lisbon, Portugal, Sep 2005.
238. I-Chun Cheng, Ke Long, Alex Kattamis, James C. Sturm, and Sigurd Wagner, "Self-aligned a-Si:H thin-film transistors on clear plastic substrates," presented at 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS21), Lisbon, Portugal, Sep 2005.
239. I-Chun Cheng, Ke Long, Alex Kattamis, Helena Gleskova, James C. Sturm, and Sigurd Wagner, "Self-aligned amorphous-silicon thin-film transistors on clear plastic," presented at USDC 5th Annual Flexible Display & Microelectronics Conference, P6, Phoenix, AZ, USA, Feb 2006.
240. Kuni Cherenack, I-Chun Cheng, Alex Kattamis, Ke Long, Sigurd Wagner, and James C. Sturm, "Optimization of SiNx barrier layers deposited at 250°C on a clear plastic substrate," presented at Mat. Res. Soc. Symp., L1.5, San Francisco, CA, USA, Apr 2006.
241. Ke Long, I-Chun Cheng, Alex Kattamis, Helena Gleskova, Sigurd Wagner, and James C. Sturm, "Mechanical design of a-Si TFT's fabrication on high-temperature clear plastic substrate," presented at Mat. Res. Soc. Symp., A18.4, San Francisco, CA, USA, Apr 2006.
242. Kun Yao, James Sturm, and Anthony Lochtefeld, "Strained Silicon Two-dimensional Electron Gases On Commercially Available Si1-xGex Relaxed Graded Buffers," in SiGe and Ge: Materials, Processing, and Devices, ECS Transactions, Volume 3 Issue No. 7, pp. 313-315 (2006).
243. R. L. Peterson and J. C. Sturm, “Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates,” Conf. Dig. of Third Intern. Silicon-Germanium Tech. and Device Mtg., pp. 254-255 (2006).
244.  W. Zheng, J.C. Sturm, C.F. Gmachl, T. Buyuklimanli, J. Marino, M.S. Denker and J.T. Mayer, Conf. Digest of Third International Silicon-Germanium Technology and Device Meeting, “The growth of ultra-uniform B-doped Si/SiGe multiple quantum wells by RTCVD for mid-IR applications” pp. S188-S190 (2006)
245. K. Chung, J.C. Sturm, E. Sanchez, S. Kuppuroa, “High Growth Rate of Epitaxial Silicon-Carbon Alloys by High-Order Silane Precursor and Chemical Vapor Deposition,” Conf. Dig. of Third Intern. Silicon-Germanium Tech. and Device Mtg., pp. 180-181 (2006).
246. Kun Yao and James C Sturm, “Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer,” in Nanomanufacturing, Mater. Res. Soc. Symp. Proc. 921E, 0921-T02-08 (2006).
247. Olgica Bakajin, Eric Fountain, Keith Morton, Stephen Y. Chou, James C. Sturm, “Materials aspects in micro- and nanofluidic systems applied to biology,” Materials Research Society Bulletin, 31, pp. 108-113 (2006)
248. J.C. Sturm, "Stable Flexible TFT Backplanes on Clear Plastic," USDC Flexible Display and Microelectronics Conference, Phoenix, AZ, Feb. 2007
249. J.C. Sturm, K. Chung, E. Sanchez, S. Kuppuroa, "Chemical Vapor Deposition Epitaxy of Silicon-Carbon Alloys at High Rates and Low Temperatures using Neopentasilane," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007.
250. K. Chung and J. Sturm, "Chlorine for in-situ Low-Temperature Silicon Surface Cleaning for Epitaxy Applications," 211th Meeting of the Electrochemical Society, Chicago, IL, May 2007.

251. B. Hekmatshoar, A. Z. Kattamis, K. Cherenack, S. Wagner and J. C. Sturm, "Novel Amorphous-Si AMOLED Pixels with OLED-independent Turn-on Voltage and Driving Current," Device Research Conference, Chicago, IL, May 2007.

252. B. Hekmatshoar, K. Long*, S. Wagner, and J.C. Sturm, "Analytical Model of Apparent Threshold Voltage Lowering Induced by Contact Resistance in Amorphous Silicon Thin Film Transistors, Device Research Conference, Chicago, IL, May 2007. *Present address:  Flexible Display Center, Arizona State University, Tempe, AZ 85284

253. J.C. Sturm, B. Hekmatoshoar, K. Cherenack, A. Kattamis, and S. Wagner, “Active-Matrix OLED’s with High-Lifetime Amorphous Silicon Transistors on Clear Plastic Substrates,” Mat. Res. Soc. Symp. Proceedings, G 1030E, Boston, MA, USA, Nov. (2007)    

254. D. Inglis, R. Riehn, J.C. Sturm, and R.H. Austin, "Microfluidic high gradient magnetic cell separation," J. Appl. Phys. 99, Art. No. 08K101 (2006)

255. Kun Yao and James C. Sturm, "Nanopatterning of Si/SiGe Two-dimensional Hole Gases by PFOTS-aided AFM Lithography of Carrier Supply Layer," Nanomanufacturing, MRS Proc. 921E-T02-08 (2006) 

256. J.C. Sturm, B. Hekmatshoar, K. Cherenack, A. Kattamis, and S. Wagner, "Active-Matrix OLED's with High-Lifetime Amorphous Silicon Transistors on Clear Plastic Substrates," MRS Proc. Vol. 1030E, November 2007
257. K.H. Cherenack, A.X. Kattamis, B. Hekmatshoar, J.C. Sturm, S. Wagner, "Self-Aligned Amorphous Silicon Thin Film Transistors with Mobility above 1 cm2V-1s-1 fabricated at 300 ^oC on Clear Plastic Substrates, MRS Proc. Vol. 1066, San Francisco, March 2008
258. International SiGe Technology and Device Meeting, Hinschu, Taiwan, MAY 2008
259. B. Hekmatshoar, K. Cherenack, K. Long, A. Kattamis, S. Wagner, J.C. Sturm, "AMOLED Reliability with a-Si TFT's in Normal vs. Inverted TFT/OLED Integration Scheme," 66th Annual Device Research Conference (DRC 2008) Digest, pp. 243-244, June 2008
260. J.C. Sturm, K.H. Chung, "Chemical Vapor Deposition Epitaxy of Silicon-based Materials Using Neopentasilane," Electrochemical Society Meeting, ECS Transactions, Vol. 16, Honolulu, HI, October (2008)
261. J. C. Sturm, B, Hekmatshoar, K. Cherenack, S. Wagner, "The Quest for the TFT Fountain of Youth," MRS Proc. Symposium G, 1114E, December (2008)

262. B. Hekmatshoar, K. Cherenack, S. Wagner and J. C. Sturm, “Amorphous Silicon Thin-Film Transistors with DC Saturation Current Half-Life of More than 100 Years”, Technical Digest - 2008 IEEE International Electron Devices Meeting (IEDM 2008) , pp. 89-92, December (2008)

263. Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "Electron Injection Mechanism in Top-gate Amorphous Silicon Thin-Film Transistors with Self-Aligned Silicide Source and Drain," pp. 241-242 IEEE/DRC JUNE (2008)
264. Conference on Advances in Microfluidics and Nanofluidics Hong Kong, JAN (2009)
265. Flex Tech Alliance, Phoenix, AZ FEB (2009)
266. J.C. Sturm, B. Hekmatshoar, K. Cherenack, S. Wagner, "Enabling Mechanisms for a-Si TFT's with 100-year Lifetimes Compatible with Clear Plastic Substrates," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ècole Polytechnique, Massy-Palaiseau, France MARCH (2009)
267. Y. Huang, S. Wagner, J.C. Sturm, "Transient phenomena in top-gate amorphous silicon thin film transistor with low-terperature self-aligned silicide source/drain and high mobility," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ecole Polytechnique, Massy-Palaiseau, France MARCH (2009)
268. K. H. Cherenack, B. Hekmatshoar, S. Wagner, J.C. Sturm, "Self-alignment techniques for fabricating a-Si TFTs at 300 oC on clear plastic," Proceedings of the 5th International Thin Film Transistor (TFT) Conference, Ecole Polytechnique, Massy-Palaiseau, France MARCH (2009)
269. H. Jin and J. C. Sturm, "Super-High Resolution Transfer Printing for Full-Color OLED Display Patterning," SID 09 Digest, pp. 597-599, JUNE (2009)
270. J.C. Sturm, B. Hekmatshoar, K. Cherenack and S. Wagner, "Amorphous Silicon TFT's with 100-year Lifetimes in a Clear Plastic Compatible Process for AMOLEDs," SID 09 Digest, pp. 979-982, JUNE (2009)
271. Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "Amorphous silicon floating-gate thin film transistor," pp. 135-136, IEEE/DRC Technical Digest, JUNE (2009)
272. J-Y. Li and J.C. Sturm, "Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD," IEEE/DRC Technical Digest JUNE (2009)
273. S. Avasthi, G. Vertelov, J. Schwartz, J.C. Sturm, "Reduction of Minority Carrier Recombination at Silicon Surfaces and Contacts Using Organic Heterojunctions," 34th IEEE PVSC Conference 2009 Philadelphia FEB (2010)
274. Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, "High retention-time nonvolatile amorphous silicon TFT memory for static active matrix OLED display without pixel refresh," pp. 179-180, IEEE/DRC Technical Digest, JUNE (2010)
275. J.C. Sturm, Y. Huang, L. Han, T. Liu, B. Hekmatshoar, K. Cherenack, E. Lausecker, and S. Wagner, "Amorphous Silicon: The Other Silicon," Ultimate Integration on Silicon (ULIS) 2011, Cork, Ireland MARCH (2011)
276. I. Chan, R. Cheng, H-C. Cheng, C-C. Lee, T. Liu, B. Hekmatshoar, Y. Huang, S. Wagner, and J.C. Sturm, "Amorphous Silicon Thin-Film Transistors with Low-Stress Silicon Nitride for Flexible Display," MRS 2011 Spring Proceedings, San Francisco, APRIL (2011)
277. T. Liu, S. Wagner and J.C. Sturm, "A new method for predicting the lifetime of highly stable amorphous-silicon thin-film transistors from accelerated tests," Tech. Proc. of IEEE International Reliability Physics Symp., pp. 2E.3.1 - 2.23.5 (2011)
278. W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "A figure of merit for oscillator-based thin-film circuits on plastic for high-performance signaling, energy harvesting and driving of actuation circuits, Device Research Conference (DRC), 10.1109/DRC.2012.6256980 pp. 117-118 University Park, PA JUN (2012).
279. T. Liu, S. Wagner, J.C. Sturm, "Two-stage model for lifetime prediction of highly stable amorphous-silicon thin-film transistors under low-gate field", Device Research Conference (DRC), 10.1109/DRC.2012.6257025 pp. 245-246 University Park, PA JUN (2012).
280. S. Avasthi, W. McClain, J. Schwartz, J.C. Sturm, "Hole-blocking Ti02/silicon heterojunction for silicon photovoltaics", Device Research Conference (DRC), 10.1109/DRC.2012.6256955 pp. 93-94 University Park, PA JUN (2012).

281. J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, J.C. Sturm, "Frequency dependence of amorphous silicon Schottky diodes for Large-Area rectification applications", Device Research Conference (DRC), 10.1109/DRC.2012.6257001 pp. 135-136 University Park, PA JUN (2012).

282. L. Huang, W. Rieutort-Louis, Y. Hu, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "Integrated all-silicon thin-film power electronics on flexible sheets for ubiquitous wireless charging stations based on solar-energy harvesting",  VLSI Circuits Symposium, 10.1109/VLSI.2012.6243858, pp. 198-199 Honolulu, HI JUN (2012).

283. Y. Hu, W. Rieutort-Louis, J. Sanz-Robinson, K. Song, J.C. Sturm, S. Wagner, N. Verma, "High-resolution sensing sheet for structural-health monitoring via scalable interfacing of flexible electronics with high-performance ICs", VLSI Circuits Symposium, 10.1109/VLSI.2012.6243819, pp. 120-121 Honolulu, HI JUN (2012).

284. C.-T. Huang, J.-Y. Li, J.C. Sturm, "High Breakdown Voltage Schottky Gating of Doped Si/SiGe 2DEG Systems Enabled by Suppression of Phosphorus Surface Segregation", International Silicon-Germanium Technology and Device Meeting (ISTDM), 10.1109/ISTDM.2012.6222514 pp. 1-2 Berkeley, CA JUN (2012).

285. J.-Y. Li, C.-T. Huang, J.C. Sturm, "Extremely Sharp Phosphorus Turn-off Slope and Effect of Hydrogen on Phosphorus Surface Segregation in Epitaxially-Grown Relaxed Si0.7Ge0.3 by RTCVD", International Silicon-Germanium Technology and Device Meeting (ISTDM), 10.1109/ISTDM.2012.6222436 pp. 1-2 Berkeley, CA JUN (2012).
286. Y. Hu, W. Rieutort-Louis, L. Huang, J. Sanz-Robinson, S. Wagner, J.C. Sturm, N. Verma, "Flexible solar-energy harvesting system on plastic with thin-film LC oscillators operating above ft for inductively-coupled power delivery", Custom Integrated Circuits Conference (CICC), 10.1109/CICC.2012.6330627 pp. 1-4 San Jose, CA SEPT (2012).

287. T. Liu and J.C. Sturm, "3-TFT OLED Pixel Cicruit for High Stability with In-pixel Current Source", SID Symposium Digest of Technical Papers, 43, pp.1101-1103, doi: 10.1002/j.2168-0159.2012.tb05984.x (2012).
288. J.-Y. Li, C.-T. Huang and J.C. Sturm, “Extremely low electron density in a modulation-doped Si/SiGe 2DEG by effective Schottky gating”, Abstracts of ECS Electrochemical Energy Summit PRiME, Honolulu, HI, OCT (2012), vol 2012-02, paper 2695, ISSN 2151-2041 (print), 2151-2043 (on-line).

      

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[Journal Articles] [Conference Papers] [Volumes Edited, Contributed Chapters]

Volumes Edited, Contributed Chapters:

1. J.C. Sturm, C.K. Chen, L. Pfeiffer, and P.L.F. Hemet, editors, "Silicon-on-insulator and buried metals in semiconductors," Mat. Res. Soc. Symp. Proc. 107 (Materials Research Society, Pittsburgh, 1988).
2. J.C. Sturm, "Si/Si1-xGex/Si transistors," Properties of Strained and Relaxed Silicon-Germanium, pp. 193-204, E. Kasper, ed. [EMIS/IEE, United Kingdom], (1995).
3. S.R.J. Brueck, J.C. Gelpey, A. Kermani, J.L. Regolini, and J.C. Sturm, editors, "Rapid Thermal and Integrated Processing IV," Mat. Res. Soc. Symp. Proc. 387 (Materials Research Society, Pittsburgh, 1995).
4. S. Wagner, H. Gleskova, J.C. Sturm, and Z. Suo, "Novel Process Technology for Macroelectronics," Technology and Applications of Hydrogenated Amorphous Silicon, R.A. Street, ed., pp. 222-251, (Springer, Berlin) (2000).
5. X.Z. Bo, N. Yao, J.C. Sturm, "Si/Si1-xGex/Si Heterojunction Bipolar Transistors," Properties of Strained and Relaxed Silicon-Germanium, EMIS Datareview, 2nd ed'n., E. Kasper, ed., (IEE, U.K.) pp. 305-318 (2000).
6. W.G. En, E.C. Jones, J.C. Sturm, M. J. Chan, S. Tiwari, M. Hirose, editors, "Materials Issues in Novel Si-Based Technology," Mat. Res. Soc. Symp. Proc. 686, (2001).
7. M. Yang, C.-L. Chang, and J.C. Sturm, "Band Alignments and Bandgaps in Si1-x-yGexCy /Si (001) Structures," Chap. 1 in Silicon-Germanium-Carbon Alloys: Growth, Properties, Devices, S. Pantelides and S. Zollner, eds. (Taylor & Francis 2002).
8. Sigurd Wagner, Helena Gleskova, I-Chun Cheng, James C. Sturm, and Z. Suo, "Mechanics of TFT technology on flexible substrates," in Flexible Flat Panel Displays, G. P. Crawford ed., John Wiley & Sons, West Sussex, England, pp. 263-283, 2005.

9. J.C. Sturm, K. Rim, J.S. Harris, C.-C. Wu, “Electronic Materials,’ Ed: Joachim N. Burghartz. Guide to State-of-the-art Electron Devices. Chichester, England, John Wiley and Sons. Ch.6, 2013.

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